• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

ATLAS-MAP:一种用于门控电子输运测量的自动测试站。

ATLAS-MAP: An Automated Test Station for Gated Electronic Transport Measurements.

作者信息

Walton Amber, Manno Michael, Dauenhauer Paul J, Frisbie C Daniel, McDonald Daniel

机构信息

Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Ave. SE, Minneapolis 55455, Minnesota, United States.

Department of Chemical Engineering and Materials Science, Center for Programmable Energy Catalysis, University of Minnesota, 421 Washington Ave. SE, Minneapolis 55455, Minnesota, United States.

出版信息

ACS Meas Sci Au. 2024 Sep 27;4(6):659-667. doi: 10.1021/acsmeasuresciau.4c00034. eCollection 2024 Dec 18.

DOI:10.1021/acsmeasuresciau.4c00034
PMID:39713027
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11659988/
Abstract

The diversification of electronic materials in devices provides a strong incentive for methods to rapidly correlate device performance with fabrication decisions. In this work, we present a low-cost automated test station for gated electronic transport measurements of field-effect transistors. Utilizing open-source PyMeasure libraries for transparent instrument control, the "ATLAS-MAP" system serves as a customizable interface between sourcemeters and samples under test and is programmed to conduct transfer curve and van der Pauw methods with static and sweeping gate voltages. Zinc oxide transistors of variable thickness (5, 10, and 20 nm) and channel size (50 μm to 3 mm, of equal length and width) were fabricated to validate the design. Standardization of testing procedures and raw data formatting enabled automated data analysis. A detailed list of parts and code files for the system are provided.

摘要

器件中电子材料的多样化为快速将器件性能与制造决策相关联的方法提供了强大的动力。在这项工作中,我们展示了一个用于场效应晶体管门控电子输运测量的低成本自动化测试站。利用开源的PyMeasure库进行透明仪器控制,“ATLAS - MAP”系统作为源表和被测样品之间的可定制接口,并被编程为在静态和扫描栅极电压下进行转移曲线和范德堡方法。制备了可变厚度(5、10和20纳米)和沟道尺寸(50微米至3毫米,长宽相等)的氧化锌晶体管以验证该设计。测试程序和原始数据格式化的标准化实现了自动化数据分析。提供了该系统的详细零件清单和代码文件。

相似文献

1
ATLAS-MAP: An Automated Test Station for Gated Electronic Transport Measurements.ATLAS-MAP:一种用于门控电子输运测量的自动测试站。
ACS Meas Sci Au. 2024 Sep 27;4(6):659-667. doi: 10.1021/acsmeasuresciau.4c00034. eCollection 2024 Dec 18.
2
Addressing Mobility Overestimation in Short-Channel IGZO TFTs Using the Gated Van der Pauw Method.使用门控范德堡方法解决短沟道铟镓锌氧化物薄膜晶体管中的迁移率高估问题。
ACS Appl Mater Interfaces. 2024 Nov 20;16(46):63778-63785. doi: 10.1021/acsami.4c14405. Epub 2024 Nov 11.
3
Self-Aligned van der Waals Heterojunction Diodes and Transistors.自对准范德瓦尔斯异质结二极管和晶体管。
Nano Lett. 2018 Feb 14;18(2):1421-1427. doi: 10.1021/acs.nanolett.7b05177. Epub 2018 Feb 5.
4
Ultrashort Vertical-Channel van der Waals Semiconductor Transistors.超短垂直沟道范德华半导体晶体管
Adv Sci (Weinh). 2019 Dec 23;7(4):1902964. doi: 10.1002/advs.201902964. eCollection 2020 Feb.
5
Thickness effect on low-power driving of MoS transistors in balanced double-gate fields.平衡双栅场中MoS晶体管低功耗驱动的厚度效应
Nanotechnology. 2020 Apr 3;31(25):255201. doi: 10.1088/1361-6528/ab7f7e. Epub 2020 Mar 12.
6
Ultrashort Channel Length Black Phosphorus Field-Effect Transistors.超薄沟道长度黑磷场效应晶体管。
ACS Nano. 2015 Sep 22;9(9):9236-43. doi: 10.1021/acsnano.5b04036. Epub 2015 Aug 21.
7
Control of Threshold Voltage for Top-Gated Ambipolar Field-Effect Transistor by Gate Buffer Layer.栅极缓冲层对顶栅双极型场效应晶体管阈值电压的控制。
ACS Appl Mater Interfaces. 2016 Jul 13;8(27):17416-20. doi: 10.1021/acsami.6b03671. Epub 2016 Jun 29.
8
Hysteresis-free MoS metal semiconductor field-effect transistors with van der Waals Schottky junction.具有范德华肖特基结的无滞后金属半导体场效应晶体管。
Nanotechnology. 2021 Jan 7;32(13):135201. doi: 10.1088/1361-6528/abd2e8.
9
Charge carrier mobility in thin films of organic semiconductors by the gated van der Pauw method.用栅控范德堡法测量有机半导体薄膜中的电荷载流子迁移率。
Nat Commun. 2017 Apr 11;8:14975. doi: 10.1038/ncomms14975.
10
Channel length scaling of MoS2 MOSFETs.MoS2 MOSFET 的沟道长度缩放。
ACS Nano. 2012 Oct 23;6(10):8563-9. doi: 10.1021/nn303513c. Epub 2012 Sep 12.

本文引用的文献

1
Nanopore Fabrication Made Easy: A Portable, Affordable Microcontroller-Assisted Approach for Tailored Pore Formation via Controlled Breakdown.轻松实现纳米孔制造:一种通过可控击穿形成定制孔的便携式、经济实惠的微控制器辅助方法。
Anal Chem. 2024 Feb 6;96(5):2124-2134. doi: 10.1021/acs.analchem.3c04860. Epub 2024 Jan 26.
2
PassStat, a simple but fast, precise and versatile open source potentiostat.PassStat,一款简单却快速、精确且通用的开源恒电位仪。
HardwareX. 2022 Mar 9;11:e00290. doi: 10.1016/j.ohx.2022.e00290. eCollection 2022 Apr.
3
Low-Cost Platform for Multiplexed Electrochemical Melting Curve Analysis.
用于多重电化学熔解曲线分析的低成本平台
ACS Meas Sci Au. 2022 Apr 20;2(2):147-156. doi: 10.1021/acsmeasuresciau.1c00044. Epub 2021 Nov 22.
4
The Wisconsin Oscillator: A Low-Cost Circuit for Powering Ion Guides, Funnels, and Traps.威斯康星振荡器:一种为离子引导器、漏斗和陷阱供电的低成本电路。
J Am Soc Mass Spectrom. 2021 Dec 1;32(12):2821-2826. doi: 10.1021/jasms.1c00247. Epub 2021 Nov 3.
5
Metrology for the next generation of semiconductor devices.下一代半导体器件的计量学
Nat Electron. 2018;1. doi: 10.1038/s41928-018-0150-9.
6
A low-cost, open-source digital stripchart recorder for chromatographic detectors using a Raspberry Pi.使用树莓派的低成本、开源数字条带图记录仪,用于色谱检测器。
J Chromatogr A. 2019 Oct 11;1603:396-400. doi: 10.1016/j.chroma.2019.03.070. Epub 2019 Apr 1.
7
Critical assessment of charge mobility extraction in FETs.场效应晶体管中电荷迁移率提取的批判性评估。
Nat Mater. 2017 Dec 19;17(1):2-7. doi: 10.1038/nmat5035.
8
Charge carrier mobility in thin films of organic semiconductors by the gated van der Pauw method.用栅控范德堡法测量有机半导体薄膜中的电荷载流子迁移率。
Nat Commun. 2017 Apr 11;8:14975. doi: 10.1038/ncomms14975.
9
Field Effect Modulation of Outer-Sphere Electrochemistry at Back-Gated, Ultrathin ZnO Electrodes.在外加栅压的超薄 ZnO 电极的外层空间电化学的场效应调节。
J Am Chem Soc. 2016 Jun 15;138(23):7220-3. doi: 10.1021/jacs.6b02547. Epub 2016 Jun 6.
10
Low dielectric constant materials.低介电常数材料。
Chem Rev. 2010 Jan;110(1):56-110. doi: 10.1021/cr9002819.