Kim Seung-Mo, Kim Minjae, Lee Chan Bin, Choi Useok, Kwon Min Gyu, Kim Ki Sung, Kim Joon, Hwang Hyeon Jun, Lee Byoung Hun
Center for Semiconductor Technology Convergence, Department of Electrical Engineering, Pohang University of Science and Technology, Cheongam-ro 77, Nam-gu, Pohang, Gyeongbuk 37673, South Korea.
School of Materials Science and Engineering, Gwangju Institute of Science and Technology, 123, Cheomdangwagi-ro, Buk-gu, Gwangju, 61005, South Korea.
ACS Appl Mater Interfaces. 2025 Jan 15;17(2):3531-3537. doi: 10.1021/acsami.4c10813. Epub 2025 Jan 2.
A novel approach to delicately control the phase of a ferroelectric has been developed using a continuous-wave laser scanning annealing (CW-LSA) process. After proper process optimization, the equivalent oxide thickness (EOT) of 3.5 Å with a dielectric constant (κ) of 68 Å is achieved from HZO in a metal-ferroelectric-metal (MFM) capacitor structure. The leakage current density ( = 4.6 × 10 A/cm at +0.8 V) was four times lower compared to the reference group treated with an optimized RTA process. The outstanding electrical characteristics of the 6 nm HZO film were attributed to the stable formation of the morphotropic phase boundary (MPB) structure, which was enabled by the directional scanning nature of the CW-LSA process.
利用连续波激光扫描退火（CW-LSA）工艺，开发出了一种精细控制铁电体相位的新方法。经过适当的工艺优化，在金属-铁电体-金属（MFM）电容器结构中，由HZO实现了等效氧化物厚度（EOT）为3.5 Å、介电常数（κ）为68 Å。与采用优化快速热退火（RTA）工艺处理的参考组相比，漏电流密度（在+0.8 V时为4.6×10 A/cm）降低了四倍。6 nm HZO薄膜出色的电学特性归因于形态转变相界（MPB）结构的稳定形成，这是由CW-LSA工艺的定向扫描特性实现的。
