Hu Mingyuan, Yang Jianmin, Wang Yan, Xia Junchao, Gan Quan, Yang Shuhuan, Xu Juping, Liu Shulin, Yin Wen, Jia Baohai, Xie Lin, Li Haifeng, He Jiaqing
Shenzhen Key Laboratory of Thermoelectric Materials, Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China.
Guangdong Provincial Key Laboratory of Advanced Thermoelectric Materials and Device Physics, Southern University of Science and Technology, Shenzhen, 518055, China.
Nat Commun. 2025 Jan 2;16(1):128. doi: 10.1038/s41467-024-55689-7.
Inorganic plastic semiconductors play a crucial role in the realm of flexible electronics. In this study, we present a cost-effective plastic thermoelectric semimetal magnesium bismuthide (α-MgBi), exhibiting remarkable thermoelectric performance. Bulk single-crystalline α-MgBi exhibits considerable plastic deformation at room temperature, allowing for the fabrication of intricate shapes such as the letters "SUSTECH" and a flexible chain. Transmission electron microscopy, time-of-flight neutron diffraction, and chemical bonding theoretic analyses elucidate that the plasticity of α-MgBi stems from the helical dislocation-driven interlayer slip, small-sized Mg atoms induced weak interlayer Mg-Bi bonds, and low modulus of intralayer MgBi networks. Moreover, we achieve a power factor value of up to 26.2 µW cm K along the c-axis at room temperature in an n-type α-MgBi crystal. Our out-of-plane flexible thermoelectric generator exhibit a normalized power density of 8.1 μW cm K with a temperature difference of 7.3 K. This high-performance plastic thermoelectric semimetal promises to advance the field of flexible and deformable electronics.
无机塑料半导体在柔性电子领域发挥着关键作用。在本研究中,我们展示了一种具有成本效益的塑料热电半金属铋化镁(α-MgBi),其表现出卓越的热电性能。块状单晶α-MgBi在室温下表现出相当大的塑性变形,能够制造出诸如字母“SUSTECH”和柔性链条等复杂形状。透射电子显微镜、飞行时间中子衍射和化学键理论分析表明,α-MgBi的可塑性源于螺旋位错驱动的层间滑移、小尺寸Mg原子导致的层间Mg-Bi键较弱以及层内MgBi网络的低模量。此外,在n型α-MgBi晶体中,我们在室温下沿c轴实现了高达26.2 µW cm K的功率因子值。我们的面外柔性热电发电机在7.3 K的温差下表现出8.1 μW cm K的归一化功率密度。这种高性能的塑料热电半金属有望推动柔性和可变形电子领域的发展。