Liu Tzu-Ling, Bent Stacey F
Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA.
Department of Energy Science and Engineering, Stanford University, Stanford, California 94305, USA.
Mater Horiz. 2025 Mar 17;12(6):1711-1725. doi: 10.1039/d4mh01472c.
In recent years, area-selective deposition (ASD) processes have attracted increasing interest in both academia and industry due to their bottom-up nature, which can simplify current fabrication processes with improved process accuracy. Hence, more research is being conducted to both expand the toolbox of ASD processes to fabricate nanostructured materials and to understand the underlying mechanisms that impact selectivity. This article provides an overview of current developments in ASD processes, beginning with an introduction to various approaches to achieve ASD and the factors that affect selectivity between growth and non-growth surfaces, using area-selective atomic layer deposition (AS-ALD) as the main model system. Following that, we discuss several other selective deposition processes, including area-selective chemical vapor deposition, area-selective sputter deposition, and area-selective molecular beam epitaxy. Finally, we provide some examples of current applications of ASD processes and discuss the primary challenges in this field.
近年来，区域选择性沉积（ASD）工艺因其自下而上的特性，在学术界和工业界都引起了越来越多的关注，这种特性可以简化当前的制造工艺并提高工艺精度。因此，人们正在进行更多的研究，以扩大用于制造纳米结构材料的ASD工艺工具箱，并了解影响选择性的潜在机制。本文概述了ASD工艺的当前发展情况，首先介绍实现ASD的各种方法以及影响生长表面和非生长表面之间选择性的因素，并将区域选择性原子层沉积（AS-ALD）作为主要模型系统。在此之后，我们讨论了其他几种选择性沉积工艺，包括区域选择性化学气相沉积、区域选择性溅射沉积和区域选择性分子束外延。最后，我们提供了ASD工艺当前应用的一些示例，并讨论了该领域的主要挑战。
