Garg Chirag, Filippou Panagiotis Ch, Ferrante Yari, Yang See-Hun, Hughes Brian, Rettner Charles T, Phung Timothy, Faleev Sergey, Topuria Teya, Samant Mahesh G, Jeong Jaewoo, Parkin Stuart S P
IBM Research-Almaden, San Jose, CA, USA.
Samsung Semiconductor Inc., San Jose, CA, USA.
Nat Nanotechnol. 2025 Mar;20(3):360-365. doi: 10.1038/s41565-024-01827-7. Epub 2025 Jan 3.
Magnetic random-access memory that uses magnetic tunnel junction memory cells is a high-performance, non-volatile memory technology that goes beyond traditional charge-based memories. Today, its speed is limited by the high magnetization of the memory storage layer. Here we prepare magnetic tunnel junction memory devices with a low magnetization ferrimagnetic Heusler alloy MnGe as the memory storage layer on technologically relevant amorphous substrates using a combination of a nitride seed layer and a chemical templating layer. We switch the magnetic state of the storage layer with nanosecond long write pulses at a reliable write error rate of 10 and detect a tunnelling magnetoresistance of 87% at ambient temperature. These results provide a strategy towards lower write switching currents using ferrimagnetic Heusler materials and, therefore, to the scaling of high-performance magnetic random-access memories beyond those nodes possible with ferromagnetic memory layers.
使用磁性隧道结存储单元的磁性随机存取存储器是一种高性能、非易失性存储技术，超越了传统的基于电荷的存储器。如今，其速度受到存储层高磁化强度的限制。在此，我们使用氮化物种子层和化学模板层的组合，在技术上相关的非晶衬底上制备了以低磁化强度的亚铁磁性赫斯勒合金MnGe作为存储层的磁性隧道结存储器件。我们以可靠的10的写入错误率，用纳秒级长的写入脉冲切换存储层的磁状态，并在室温下检测到87%的隧道磁电阻。这些结果提供了一种使用亚铁磁性赫斯勒材料降低写入开关电流的策略，从而实现高性能磁性随机存取存储器的扩展，超越使用铁磁存储层所能达到的节点。
