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通过射频磁控溅射制备的掺钪碲化锗薄膜。

Sc-doped GeTe thin films prepared by radio-frequency magnetron sputtering.

作者信息

Bouška Marek, Gutwirth Jan, Bečvář Kamil, Kucek Vladimír, Šlang Stanislav, Janíček Petr, Prokeš Lubomír, Havel Josef, Nazabal Virginie, Němec Petr

机构信息

Department of Graphic Arts and Photophysics, Faculty of Chemical Technology, University of Pardubice, Studentská 573, Pardubice, 532 10, Czech Republic.

Department of General and Inorganic Chemistry, Faculty of Chemical Technology, University of Pardubice, Studentská 573, Pardubice, 532 10, Czech Republic.

出版信息

Sci Rep. 2025 Jan 3;15(1):627. doi: 10.1038/s41598-024-84963-3.

DOI:10.1038/s41598-024-84963-3
PMID:39753741
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11698982/
Abstract

Radio frequency magnetron co-sputtering method employing GeTe and Sc targets was exploited for the deposition of Sc doped GeTe thin films. Different characterization techniques (scanning electron microscopy with energy-dispersive X-ray analysis, X-ray diffraction, atomic force microscopy, sheet resistance temperature-dependent measurements, variable angle spectroscopic ellipsometry, and laser ablation time-of-flight mass spectrometry) were used to evaluate the properties of as-deposited (amorphous) and annealed (crystalline) Ge-Te-Sc thin films. Prepared amorphous thin films have GeTe, GeTeSc, GeTeSc, GeTeSc and GeTeSc chemical composition. The crystallization temperatures were found in the region of ~ 153-272 °C and they increase with scandium content. Upon amorphous-crystalline material phase change, large changes in sheet resistance were measured, with electrical contrast in terms of sheet resistance ratio R/R in the range of 1.37.10 - 9.1.10. Simultaneously, huge variations of optical functions were found as demonstrated by absolute values of optical contrast values (at 405 nm) in the range of |Δn|+|Δk| = 1.88-3.75 reaching maximum for layer containing 8 at% of Sc.

摘要

采用GeTe靶材和Sc靶材的射频磁控共溅射法用于沉积Sc掺杂的GeTe薄膜。使用了不同的表征技术（带能谱X射线分析的扫描电子显微镜、X射线衍射、原子力显微镜、与温度相关的薄层电阻测量、可变角度光谱椭偏仪以及激光烧蚀飞行时间质谱）来评估沉积态（非晶态）和退火态（晶态）的Ge-Te-Sc薄膜的性能。制备的非晶薄膜具有GeTe、GeTeSc、GeTeSc、GeTeSc和GeTeSc的化学成分。发现结晶温度在约153 - 272°C范围内，并且它们随钪含量增加而升高。在非晶 - 晶态材料相变时，测量到薄层电阻有很大变化，薄层电阻比R/R的电学对比度在1.37×10 - 9.1×10范围内。同时，发现光学功能有巨大变化，如在405nm处光学对比度值（|Δn| + |Δk|）的绝对值在1.88 - 3.75范围内，对于含8原子%Sc的层达到最大值。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/db22/11698982/d7f5884d3fa0/41598_2024_84963_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/db22/11698982/9807869d9579/41598_2024_84963_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/db22/11698982/9b1bf326435b/41598_2024_84963_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/db22/11698982/d282f51e813d/41598_2024_84963_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/db22/11698982/d7f5884d3fa0/41598_2024_84963_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/db22/11698982/9807869d9579/41598_2024_84963_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/db22/11698982/9b1bf326435b/41598_2024_84963_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/db22/11698982/d282f51e813d/41598_2024_84963_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/db22/11698982/d7f5884d3fa0/41598_2024_84963_Fig4_HTML.jpg

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