Lee Younjoo, Jeong Junkyeong, Jung Kwanwook, Lee Jeihyun, Youn Yungsik, Park Soohyung, Lee Hyunbok, Yi Yeonjin
Department of Physics, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea.
Advanced Analysis and Data Center, Korea Institute of Science and Technology (KIST), 5 Hwarang-ro 14-gil, Seongbuk-gu, Seoul, 02792, Republic of Korea.
Sci Rep. 2025 Jan 4;15(1):745. doi: 10.1038/s41598-024-84313-3.
Despite recent advancements in organic photovoltaics (OPVs), further improvements in power conversion efficiency (PCE) and device lifetime are necessary for commercial viability. Strategies such as optimizing the molecular orientation and minimizing the charge traps of organic films are particularly effective in enhancing photovoltaic performance. In this study, we successfully utilized vacuum electrospray deposition (VESD) to achieve favourable face-on stacking geometries while preserving the integrity of the interfaces in poly(3-hexylthiophene-2,5-diyl) (P3HT): [6,6]-phenyl-C-butyric acid methyl ester (PCBM) bulk heterojunction (BHJ) films. Unlike conventional spin-coated (SC) P3HT: PCBM BHJ films, which predominantly exhibit an edge-on orientation, VESD facilitates a beneficial face-on orientation, improving vertical charge transport through enhanced π-π stacking interactions. Furthermore, VESD effectively eliminates residual solvents during film formation, ensuring well-defined interfaces between the layers in the OPV devices. As a result, the VESD OPVs demonstrated enhanced PCE and extended operational lifetimes compared to their SC counterparts. Impedance spectroscopy analysis confirmed that the VESD OPVs possessed significantly higher electron mobility and longer electron lifetimes, indicating reduced charge traps and improved charge dynamics. These results highlight the potential of VESD as a versatile technique for controlling molecular orientation in solution-processable organic semiconductors, enabling the development of highly efficient devices with fewer charge traps without relying on synthetic or epitaxial methods.
尽管有机光伏(OPV)领域最近取得了进展,但要实现商业可行性,仍需进一步提高功率转换效率(PCE)和器件寿命。诸如优化分子取向和最小化有机薄膜的电荷陷阱等策略,在提高光伏性能方面特别有效。在本研究中,我们成功利用真空电喷雾沉积(VESD)实现了有利的面朝上堆叠几何结构,同时保持了聚(3-己基噻吩-2,5-二亚基)(P3HT):[6,6]-苯基-C-丁酸甲酯(PCBM)本体异质结(BHJ)薄膜界面的完整性。与传统旋涂(SC)的P3HT:PCBM BHJ薄膜主要呈现边缘取向不同,VESD促进了有益的面朝上取向,通过增强的π-π堆叠相互作用改善了垂直电荷传输。此外,VESD在成膜过程中有效消除了残留溶剂,确保了OPV器件各层之间清晰的界面。结果,与SC对应物相比,VESD OPV表现出更高的PCE和更长的运行寿命。阻抗谱分析证实,VESD OPV具有显著更高的电子迁移率和更长的电子寿命,表明电荷陷阱减少且电荷动力学得到改善。这些结果突出了VESD作为一种通用技术在控制可溶液加工有机半导体中分子取向方面的潜力,能够在不依赖合成或外延方法的情况下开发出具有更少电荷陷阱的高效器件。