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苯基-苯并噻吩并噻吩-10薄膜中厚度依赖的结构转变及普遍存在的界面双层的稳定性

Thickness Dependent Structural Transition in Ph-BTBT-10 Thin Films and Stabilization of the Ubiquitous Interface Bilayer.

作者信息

Yan Shunya, Cazorla Alba, Solano Eduardo, Zschieschang Ute, Klauk Hagen, Ocal Carmen, Barrena Esther

机构信息

Instituto de Ciencia de Materiales de Barcelona (ICMAB-CSIC), Campus UAB, Carrer dels Til·lers, s/n, Bellaterra, 08193 Barcelona, Spain.

ALBA Synchrotron, Carrer de la Lium 2-26, Cerdanyola del Valles, 08290 Barcelona, Spain.

出版信息

ACS Appl Mater Interfaces. 2025 Jan 15;17(2):4176-4184. doi: 10.1021/acsami.4c17778. Epub 2025 Jan 6.

Abstract

The influence of the film/substrate interface and the role of film thickness on the structural transition temperature for thin films of the asymmetric BTBT derivative 7-decyl-2-phenyl[1]benzothieno[3,2-][1]-benzothiophene (Ph-BTBT-10) have been addressed by using Kelvin probe force microscopy (KPFM) and synchrotron grazing incidence wide angle X-ray scattering (GIWAXS). Our data strongly suggest that the structural transformation from a single-layer phase to the thermodynamically stable bilayer structure develops from the bottom of the film to its surface. Contrary to observations in other organic semiconductor films, notably, the thinner the Ph-BTBT-10 film, the lower is the transition temperature. This unusual behavior is attributed to the ubiquitous presence of a bilayer at the substrate interface. The evolution over time of an ultrathin film with ≈3 nm nominal thickness (below the interfacial bilayer completion) shows that molecular diffusion and rearrangement at room temperature lead to the bilayer stacking within hours, a result that further supports the role of the bilayer interface on the structural transition from single-layer to bilayer structure. Our findings highlight that both aging and thermal annealing processes need to be optimized based on the specific thickness of the Ph-BTBT-10 film.

摘要

通过使用开尔文探针力显微镜(KPFM)和同步加速器掠入射广角X射线散射(GIWAXS),研究了非对称BTBT衍生物7-癸基-2-苯基[1]苯并噻吩并[3,2-][1]苯并噻吩(Ph-BTBT-10)薄膜中薄膜/衬底界面的影响以及薄膜厚度对结构转变温度的作用。我们的数据有力地表明,从单层相到热力学稳定的双层结构的结构转变是从薄膜底部向其表面发展的。与其他有机半导体薄膜的观察结果相反,值得注意的是,Ph-BTBT-10薄膜越薄,转变温度越低。这种不寻常的行为归因于衬底界面处普遍存在的双层结构。标称厚度约为3 nm(低于界面双层完成厚度)的超薄膜随时间的演变表明,室温下分子扩散和重排会在数小时内导致双层堆叠,这一结果进一步支持了双层界面在从单层结构到双层结构的结构转变中的作用。我们的研究结果强调,老化和热退火过程都需要根据Ph-BTBT-10薄膜的特定厚度进行优化。

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