Yuan Mingyue, Li Bangxin, Du Yiqian, Liu Jiajun, Zhou Xiaodi, Cui Jiacheng, Lv Hualiang, Che Renchao
Laboratory of Advanced Materials, Institute of Optoelectronics, Fudan University, Shanghai, 200438, P. R. China.
Adv Mater. 2025 Feb;37(8):e2417580. doi: 10.1002/adma.202417580. Epub 2025 Jan 7.
Metal single atoms (SA)-support interactions inherently exhibit significant electrochemical activity, demonstrating potential in energy catalysis. However, leveraging these interactions to modulate electronic properties and extend application fields is a formidable challenge, demanding in-depth understanding and quantitative control of atomic-scale interactions. Herein, in situ, off-axis electron holography technique is utilized to directly visualize the interactions between SAs and the graphene surface. These interactions facilitate the formation of dispersed nanoscale regions with high charge density and are highly sensitive to external electromagnetic (EM) fields, resulting in controllable dynamic relaxation processes for charge accumulation and restoration. This leads to customized dielectric relaxation, which is difficult to achieve with current band engineering methods. Moreover, these electronic behaviors are insensitive to elevated temperatures, having characteristics distinct from those of typical metallic or semiconducting materials. Based on these results, programmable EM wave absorption properties are achieved by developing a library of SA-graphene materials and precisely controlling SA-support interactions to tailor their responses to EM waves in terms of frequency and intensity. This advancement addresses the customized anti-EM interference requirements of electronic components, greatly enhancing the development of integrated circuits and micro-nano chips. Future efforts will concentrate on manipulating atomic interactions in SA-support, potentially revolutionizing nanoelectronics and optoelectronics.
金属单原子(SA)与载体的相互作用本质上具有显著的电化学活性,在能量催化方面展现出潜力。然而,利用这些相互作用来调节电子性质并扩展应用领域是一项艰巨的挑战,需要对原子尺度的相互作用有深入理解并进行定量控制。在此,利用原位离轴电子全息技术直接观察SA与石墨烯表面之间的相互作用。这些相互作用促进了具有高电荷密度的分散纳米级区域的形成,并且对外部电磁(EM)场高度敏感,从而导致电荷积累和恢复的可控动态弛豫过程。这导致了定制的介电弛豫,这是目前能带工程方法难以实现的。此外,这些电子行为对升高的温度不敏感,具有与典型金属或半导体材料不同的特性。基于这些结果,通过开发SA-石墨烯材料库并精确控制SA与载体的相互作用,以在频率和强度方面调整它们对EM波的响应,从而实现了可编程的EM波吸收特性。这一进展满足了电子元件定制化抗EM干扰的要求,极大地推动了集成电路和微纳芯片的发展。未来的努力将集中在操纵SA-载体中的原子相互作用,这可能会给纳米电子学和光电子学带来变革。