Deng Ke, Liu Zhonghao, Liu Hulin, Chen Yanxiang, Li Shang, Guo Shuren, Xiu Boyu, Dong Xuanpu, Cao Huatang
Zhuzhou Hanjie Aviation Science & Technology Co., Ltd., Zhuzhou 412002, China.
State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China.
Sensors (Basel). 2025 Jan 3;25(1):242. doi: 10.3390/s25010242.
This study has investigated the effects of different annealing temperatures on the microstructure, chemical composition, phase structure, and piezoelectric properties of ZnO films. The analysis focuses on how annealing temperature influences the oxygen content and the preferred c-axis (002) orientation of the films. It was found that annealing significantly increases the grain size and optimizes the columnar crystal structure, though excessive high-temperature annealing leads to structural degradation. This behavior is likely related to changes in oxygen content at different annealing temperatures. High resolution transmission electron microscopy (HR-TEM) reveals that the films exhibit high-resolution lattice stripes, confirming their high crystallinity. Although the films exhibit growth in multiple orientations, the c-axis (002) orientation remains the predominant crystallographic growth. Further piezoelectric property analysis demonstrates that the ZnO films annealed at 400 °C exhibit enhanced piezoelectric performance and stable linear piezoelectric behavior. These findings offer valuable support for optimizing the piezoelectric properties of ZnO films and their applications in piezoelectric sensors.
本研究调查了不同退火温度对ZnO薄膜的微观结构、化学成分、相结构和压电性能的影响。分析重点在于退火温度如何影响薄膜的氧含量和择优c轴（002）取向。结果发现，退火显著增加了晶粒尺寸并优化了柱状晶体结构，不过过高温度的退火会导致结构退化。这种行为可能与不同退火温度下氧含量的变化有关。高分辨率透射电子显微镜（HR-TEM）显示，薄膜呈现出高分辨率的晶格条纹，证实了其高结晶度。尽管薄膜呈现出多取向生长，但c轴（002）取向仍然是主要的晶体生长方向。进一步的压电性能分析表明，在400°C退火的ZnO薄膜表现出增强的压电性能和稳定的线性压电行为。这些发现为优化ZnO薄膜的压电性能及其在压电传感器中的应用提供了有价值的支持。
