Niu Ruirui, Li Zhuoxian, Han Xiangyan, Qu Zhuangzhuang, Liu Qianling, Wang Zhiyu, Han Chunrui, Wang Chunwen, Wu Yangliu, Yang Chendi, Lv Ming, Yang Kaining, Watanabe Kenji, Taniguchi Takashi, Liu Kaihui, Mao Jinhai, Shi Wu, Che Renchao, Zhou Wu, Xue Jiamin, Wu Menghao, Peng Bo, Han Zheng Vitto, Gan Zizhao, Lu Jianming
State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing, China.
Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China.
Nat Nanotechnol. 2025 Mar;20(3):346-352. doi: 10.1038/s41565-024-01846-4. Epub 2025 Jan 15.
Interfacial ferroelectricity emerges in non-centrosymmetric heterostructures consisting of non-polar van der Waals (vdW) layers. Ferroelectricity with concomitant Coulomb screening can switch topological currents or superconductivity and simulate synaptic response. So far, it has only been realized in bilayer graphene moiré superlattices, posing stringent requirements to constituent materials and twist angles. Here we report ferroelectricity with concomitant Coulomb screening in different vdW heterostructures free of moiré interfaces containing monolayer graphene, boron nitride (BN) and transition metal chalcogenide layers. We observe a ferroelectric hysteretic response in a BN/monolayer graphene/BN, as well as in BN/WSe/monolayer graphene/WSe/BN heterostructure, but also when replacing the stacking fault-containing BN with multilayer twisted MoS, a prototypical sliding ferroelectric. Our control experiments exclude alternative mechanisms, such that we conclude that ferroelectricity originates from stacking faults in the BN flakes. Hysteretic switching occurs when a conductive ferroelectric screens the gating field electrically and controls the monolayer graphene through its polarization field. Our results relax some of the material and design constraints for device applications based on sliding ferroelectricity and should enable memory device or the combination with diverse vdW materials with superconducting, topological or magnetic properties.
界面铁电性出现在由非极性范德华（vdW）层组成的非中心对称异质结构中。伴随库仑屏蔽的铁电性可以切换拓扑电流或超导性，并模拟突触响应。到目前为止，它仅在双层石墨烯莫尔超晶格中实现，这对组成材料和扭转角提出了严格要求。在这里，我们报告了在不含莫尔界面的不同vdW异质结构中伴随库仑屏蔽的铁电性，这些异质结构包含单层石墨烯、氮化硼（BN）和过渡金属硫族化物层。我们在BN/单层石墨烯/BN以及BN/WSe/单层石墨烯/WSe/BN异质结构中观察到铁电滞回响应，而且当用多层扭曲的MoS（一种典型的滑动铁电体）替代含堆垛层错的BN时也观察到了该响应。我们的对照实验排除了其他机制，因此我们得出结论，铁电性源于BN薄片中的堆垛层错。当导电铁电体通过电屏蔽栅极场并通过其极化场控制单层石墨烯时，会发生滞回切换。我们的结果放宽了基于滑动铁电性的器件应用的一些材料和设计限制，并且应该能够实现存储器件或与具有超导、拓扑或磁性的各种vdW材料相结合。
