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用于晶圆级二维材料生长的衬底工程:策略、机制与展望

Substrate engineering for wafer-scale two-dimensional material growth: strategies, mechanisms, and perspectives.

作者信息

Zhao Tiange, Guo Jiaxiang, Li Taotao, Wang Zhen, Peng Meng, Zhong Fang, Chen Yue, Yu Yiye, Xu Tengfei, Xie Runzhang, Gao Pingqi, Wang Xinran, Hu Weida

机构信息

School of Materials, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China.

State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.

出版信息

Chem Soc Rev. 2023 Mar 6;52(5):1650-1671. doi: 10.1039/d2cs00657j.

Abstract

The fabrication of wafer-scale two-dimensional (2D) materials is a prerequisite and important step for their industrial applications. Chemical vapor deposition (CVD) is the most promising approach to produce high-quality films in a scalable way. Recent breakthroughs in the epitaxy of wafer-scale single-crystalline graphene, hexagonal boron nitride, and transition-metal dichalcogenides highlight the pivotal roles of substrate engineering by lattice orientation, surface steps, and energy considerations. This review focuses on the existing strategies and underlying mechanisms, and discusses future directions in epitaxial substrate engineering to deliver wafer-scale 2D materials for integrated electronics and photonics.

摘要

晶圆级二维(2D)材料的制造是其工业应用的前提条件和重要步骤。化学气相沉积(CVD)是最有前景的以可扩展方式生产高质量薄膜的方法。晶圆级单晶石墨烯、六方氮化硼和过渡金属二硫属化物外延方面的最新突破突出了通过晶格取向、表面台阶和能量考虑进行衬底工程的关键作用。本综述重点关注现有策略和潜在机制,并讨论外延衬底工程的未来方向,以提供用于集成电子和光子学的晶圆级二维材料。

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