Zhang Zailan, Zobelli Alberto, Gao Chaofeng, Cheng Yingchun, Zhang Jiuxiang, Caillaux Jonathan, Qiu Lipeng, Li Songlin, Cattelan Mattia, Kandyba Viktor, Barinov Alexei, Zaghrioui Mustapha, Bendounan Azzedine, Rueff Jean-Pascal, Qi Weiyan, Perfetti Luca, Papalazarou Evangelos, Marsi Marino, Chen Zhesheng
School of Physics, Nanjing University of Science and Technology, Nanjing, 210094, People's Republic of China.
Laboratoire de Physique des Solides, CNRS, Université Paris-Saclay, 91405, Orsay, France.
Nat Commun. 2025 Jan 17;16(1):763. doi: 10.1038/s41467-025-56113-4.
Interlayer coupling in 2D heterostructures can result in a reduction of the rotation symmetry and the generation of quantum phenomena. Although these effects have been demonstrated in transition metal dichalcogenides (TMDs) with mismatched interfaces, the role of band hybridization remains unclear. In addition, the creation of flat bands at the valence band maximum (VBM) of TMDs is still an open challenge. In this work, we investigate the electronic structure of monolayer MoS-black phosphorus heterojunctions with a combined experimental and theoretical approach. The disruption of the rotational symmetry of the MoS bands, the creation of anisotropic minigaps and the appearance of flat bands at the Γ valley, accompanied by the switch of VBM from K to Γ, are clearly observed with micro-ARPES. Unfolded band structures obtained from first principles simulations precisely describe these multiple effects - all independent of the twist angle - and demonstrates that they arise from strong band hybridization between Mo and P orbitals. The underlying physics revealed by our results paves the way for innovative electronics and optoelectronics based on TMDs superlattices, adding further flexibility to the approaches adopted in twisted hexagonal superlattices.
二维异质结构中的层间耦合会导致旋转对称性降低并产生量子现象。尽管这些效应已在具有不匹配界面的过渡金属二硫属化物(TMD)中得到证实,但能带杂化的作用仍不清楚。此外,在TMD的价带最大值(VBM)处产生平带仍然是一个悬而未决的挑战。在这项工作中,我们采用实验和理论相结合的方法研究了单层MoS-黑磷异质结的电子结构。通过微角分辨光电子能谱(micro-ARPES)清楚地观察到,MoS能带的旋转对称性被破坏、各向异性小带隙的产生以及Γ谷处平带的出现,同时VBM从K点切换到Γ点。从第一性原理模拟获得的展开能带结构精确地描述了这些多重效应——所有这些效应都与扭转角无关——并表明它们源于Mo和P轨道之间的强能带杂化。我们的结果揭示的潜在物理原理为基于TMD超晶格的创新电子学和光电子学铺平了道路,为扭曲六边形超晶格中采用的方法增加了更多灵活性。