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基于第一性原理研究的CF-SiO摩擦电纳米发电机不同接触表面的原子结构和电子性质

Atomic structures and electronic properties of different contact surfaces for C F -SiO triboelectric nanogenerator based on first-principles investigations.

作者信息

Jia Baonan, Gao Jingming, Zhao Jiaxiang, Liang Jiahe, Zhang Xinhui, Xiao Wendong, Guan Xiaoning, Lu Pengfei

机构信息

Key Laboratory of Knowledge Automation for Industrial Processes of Ministry of Education, School of Automation and Electrical Engineering, University of Science and Technology Beijing Beijing 100083 China

State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications Beijing 100876 China

出版信息

RSC Adv. 2025 Jan 17;15(3):1618-1624. doi: 10.1039/d4ra08732a. eCollection 2025 Jan 16.

Abstract

Modification of the dielectric friction layer materials is an ideal way to enhance the output performance of a triboelectric nanogenerator (TENG), but current research mostly focuses on the metal-polymer or metal-SiO materials. In this work, we constructed different TENG models based on polymer C F -SiO electret materials, and the electronic properties of the different contact surfaces were investigated using first principles. We found that the charge transfer in C F -SiO materials occurred only at the contact interface, and it was partially affected by the terminal atoms near the SiO interface. The charge transfer of the polymer C F that was in contact with the O-terminated SiO achieved a more satisfactory effect. Among them, the II-CF-O model exhibited the highest amount of charge transfer because of the better hybridization of II-CF with the O atoms of SiO layer. Our study showed that instead of adding different types of dielectric friction layers, varying the configurations of the same types of dielectric friction layers is an alternative way to regulate charge transfer. Furthermore, this strategy could provide new ideas for enhancing the performance of TENGs.

摘要

改性介电摩擦层材料是提高摩擦纳米发电机(TENG)输出性能的理想途径,但目前的研究大多集中在金属-聚合物或金属-SiO材料上。在这项工作中,我们基于聚合物CF-SiO驻极体材料构建了不同的TENG模型,并使用第一性原理研究了不同接触表面的电子特性。我们发现,CF-SiO材料中的电荷转移仅发生在接触界面,并且部分受SiO界面附近的末端原子影响。与O端接的SiO接触的聚合物CF的电荷转移取得了更令人满意的效果。其中,II-CF-O模型由于II-CF与SiO层的O原子具有更好的杂化作用而表现出最高的电荷转移量。我们的研究表明,改变相同类型介电摩擦层的构型,而不是添加不同类型的介电摩擦层,是调节电荷转移的另一种方法。此外,该策略可为提高TENG的性能提供新思路。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/282a/11740454/000b2b387372/d4ra08732a-f1.jpg

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