Xu Weiting, Jiang Jiayang, Chen Yujia, Tang Ning, Jiang Chengbao, Yang Shengxue
School of Materials Science and Engineering, Beihang University Beijing, Beijing, P. R. China.
State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, China.
Nat Commun. 2024 Nov 2;15(1):9469. doi: 10.1038/s41467-024-53907-w.
Two-dimensional (2D) dielectrics, integrated with high-mobility semiconductors, show great promise to overcome the scaling limits in miniaturized integrated circuits. However, the 2D dielectrics explored to date still face the challenges of low crystallinity, diminished dielectric constant, and the lack of effective synthesis methods. Here, we report the controllable synthesis of ultra-thin gadolinium oxychloride (GdOCl) nanosheets via a chloride hydrate-assisted chemical vapor deposition (CVD) method. The resultant GdOCl nanosheets display good dielectric properties, including a high dielectric constant (high-κ) of 15.3, robust breakdown field strengths (E) exceeding 9.9 MV/cm, and minimal gate leakage currents of approximately 10 A/cm. The top-gated GdOCl/MoS field-effect transistors (FETs) exhibit commendable switch characteristics, a negligible hysteresis of ~5 mV and a subthreshold swing down to 67.9 mV dec. The GdOCl/MoS FETs can also be employed to construct functional logic gates. Our study underscores the significant potential of the 2D GdOCl dielectric for innovative high-speed operated nanoelectronic devices.
与高迁移率半导体集成的二维（2D）电介质，在克服小型化集成电路的缩放限制方面显示出巨大潜力。然而，迄今为止所探索的二维电介质仍面临结晶度低、介电常数降低以及缺乏有效合成方法等挑战。在此，我们报告了通过氯化物水合物辅助化学气相沉积（CVD）方法可控合成超薄氯氧化钆（GdOCl）纳米片。所得的GdOCl纳米片表现出良好的介电性能，包括15.3的高介电常数（高κ）、超过9.9 MV/cm的强大击穿场强（E）以及约10 A/cm的最小栅极漏电流。顶栅GdOCl/MoS场效应晶体管（FET）表现出值得称赞的开关特性，约5 mV的可忽略滞后以及低至67.9 mV/dec的亚阈值摆幅。GdOCl/MoS FET还可用于构建功能逻辑门。我们的研究强调了二维GdOCl电介质在创新高速运行纳米电子器件方面的巨大潜力。
