Kim Wonsun, Park JaeWoo, Jeong HyeRyun, Lee Kimin, Yang Sui, Choi Eun Ha, Park Byoungchoo
Department of Electrical and Biological Physics, Kwangwoon University, Wolgye-Dong, Seoul 01897, Republic of Korea.
Department of Plasma-Bio Display, Kwangwoon University, Wolgye-Dong, Seoul 01897, Republic of Korea.
Polymers (Basel). 2025 Jan 10;17(2):163. doi: 10.3390/polym17020163.
Hybrid organohalide perovskites have received considerable attention due to their exceptional photovoltaic (PV) conversion efficiencies in optoelectronic devices. In this study, we report the development of a highly sensitive, self-powered perovskite-based photovoltaic photodiode (PVPD) fabricated by incorporating a poly(amic acid)-polyimide (PAA-PI) copolymer as an interfacial layer between a methylammonium lead iodide (CHNHPbI, MAPbI) perovskite light-absorbing layer and a poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonate) (PEDOT: PSS) hole injection layer. The PAA-PI interfacial layer effectively suppresses carrier recombination at the interfaces, resulting in a high power conversion efficiency () of 11.8% compared to 10.4% in reference devices without an interfacial layer. Moreover, applying the PAA-PI interfacial layer to the MAPbI PVPD significantly improves the photodiode performance, increasing the specific detectivity by 49 times to 7.82 × 10 Jones compared to the corresponding results of reference devices without an interfacial layer. The PAA-PI-passivated MAPbI PVPD also exhibits a wide linear dynamic range of ~103 dB and fast response times, with rise and decay times of 61 and 18 µs, respectively. The improved dynamic response of the PAA-PI-passivated MAPbI PVPD enables effective weak-light detection, highlighting the potential of advanced interfacial engineering with PAA-PI interfacial layers in the development of high-performance, self-powered perovskite photovoltaic photodetectors for a wide range of optoelectronic applications.
混合有机卤化物钙钛矿因其在光电器件中卓越的光伏（PV）转换效率而备受关注。在本研究中，我们报告了一种高灵敏度、自供电的钙钛矿基光伏光电二极管（PVPD）的研制，该器件通过在甲基碘化铅（CH₃NH₃PbI₃，MAPbI₃）钙钛矿光吸收层和聚（3,4 - 乙撑二氧噻吩） - 聚（苯乙烯磺酸盐）（PEDOT：PSS）空穴注入层之间引入聚（酰胺酸） - 聚酰亚胺（PAA - PI）共聚物作为界面层来制备。PAA - PI界面层有效抑制了界面处的载流子复合，与没有界面层的参考器件相比，功率转换效率（PCE）高达11.8%，而参考器件的PCE为10.4%。此外，将PAA - PI界面层应用于MAPbI₃ PVPD显著改善了光电二极管性能，与没有界面层的参考器件的相应结果相比，比探测率提高了49倍，达到7.82×10¹² Jones。PAA - PI钝化的MAPbI₃ PVPD还表现出约10³ dB的宽线性动态范围和快速响应时间，上升和衰减时间分别为61和18 μs。PAA - PI钝化的MAPbI₃ PVPD动态响应的改善实现了有效的弱光检测，突出了采用PAA - PI界面层的先进界面工程在开发用于广泛光电子应用的高性能、自供电钙钛矿光伏光电探测器方面的潜力。
