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金修饰对二硫化钼纳米片中光电探测器性能增强的影响。

The Au decoration effect on performance enhancement of photodetector in MoS nanosheets.

作者信息

Taherkhani Anahita, Mohammadkhani Ramin

机构信息

Department of Physics, Faculty of Science, University of Zanjan, Zanjan, 45371- 38791, Iran.

出版信息

Heliyon. 2025 Feb 5;11(4):e42492. doi: 10.1016/j.heliyon.2025.e42492. eCollection 2025 Feb 28.

DOI:10.1016/j.heliyon.2025.e42492
PMID:40028541
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11867266/
Abstract

Molybdenum disulfide nanostructures (NSs) are created using a thermal chemical vapor deposition method (TCVD). These NSs are then decorated with Au to form Au/MoS nano heterojunctions (NHs) using a Physical vapor deposition method. The goal is to create high-performance photodetectors. To study the as-prepared structures, X-ray diffraction, Raman, and UV-Visible spectroscopy are applied to analyze the structural and optical properties. The photodetectors' responsivity (R), detectivity (D), external quantum efficiency (EQE) and stability are then tested using different laser power for incident light at wavelengths of 405 and 635 nm. The results suggest that these devices have the potential for future applications in optoelectronics.

摘要

使用热化学气相沉积法（TCVD）制备二硫化钼纳米结构（NSs）。然后采用物理气相沉积法用金对这些纳米结构进行修饰，以形成金/二硫化钼纳米异质结（NHs）。目标是制造高性能光电探测器。为了研究所制备的结构，应用X射线衍射、拉曼光谱和紫外-可见光谱来分析其结构和光学性质。然后使用不同的激光功率，对波长为405和635 nm的入射光测试光电探测器的响应度（R）、探测率（D）、外量子效率（EQE）和稳定性。结果表明，这些器件在光电子学领域具有未来应用潜力。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/900c/11867266/62ccdd8a0cda/gr8.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/900c/11867266/7a960158f540/gr1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/900c/11867266/66cacb73641b/gr2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/900c/11867266/dc98bbf3386f/gr3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/900c/11867266/fb1f5ae4d64b/gr4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/900c/11867266/5fb9c8e0d36b/gr5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/900c/11867266/ed1b90ac4411/gr6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/900c/11867266/3b8f06ec2b8e/gr7.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/900c/11867266/62ccdd8a0cda/gr8.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/900c/11867266/7a960158f540/gr1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/900c/11867266/66cacb73641b/gr2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/900c/11867266/dc98bbf3386f/gr3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/900c/11867266/fb1f5ae4d64b/gr4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/900c/11867266/5fb9c8e0d36b/gr5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/900c/11867266/ed1b90ac4411/gr6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/900c/11867266/3b8f06ec2b8e/gr7.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/900c/11867266/62ccdd8a0cda/gr8.jpg

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Realization of Ultra-Scaled MoS Vertical Diodes via Double-Side Electrodes Lamination.通过双面电极层压实现超尺度MoS垂直二极管
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Fabrication Technologies for the On-Chip Integration of 2D Materials.二维材料芯片集成的制造技术。
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