Kang Zhe, Cheng Yongfa, Zheng Zhi, Cheng Feng, Chen Ziyu, Li Luying, Tan Xinyu, Xiong Lun, Zhai Tianyou, Gao Yihua
Center for Nanoscale Characterization and Devices (CNCD) Wuhan National Laboratory for Optoelectronics (WNLO) and School of Physics and School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Luoyu Road 1037, Wuhan, 430074, People's Republic of China.
College of Materials and Chemical Engineering, China Three Gorges University, Daxue Road 8, Yichang, 443002, People's Republic of China.
Nanomicro Lett. 2019 Apr 16;11(1):34. doi: 10.1007/s40820-019-0262-4.
Self-powered devices are widely used in the detection and sensing fields. Asymmetric metal contacts provide an effective way to obtain self-powered devices. Finding two stable metallic electrode materials with large work function differences is the key to obtain highly efficient asymmetric metal contacts structures. However, common metal electrode materials have similar and high work functions, making it difficult to form an asymmetric contacts structure with a large work function difference. Herein, MoC crystals with low work function (3.8 eV) was obtained by chemical vapor deposition (CVD) method. The large work function difference between MoC and Au allowed us to synthesize an efficient MoC/MoS/Au photodetector with asymmetric metal contact structure, which enables light detection without external electric power. We believe that this novel device provides a new direction for the design of miniature self-powered photodetectors. These results also highlight the great potential of ultrathin MoC prepared by CVD in heterojunction device applications.
自供电设备在检测和传感领域得到广泛应用。不对称金属接触为获得自供电设备提供了一种有效方法。找到两种具有大的功函数差的稳定金属电极材料是获得高效不对称金属接触结构的关键。然而，常见的金属电极材料具有相似且较高的功函数，使得难以形成具有大功函数差的不对称接触结构。在此，通过化学气相沉积（CVD）方法获得了具有低功函数（3.8 eV）的MoC晶体。MoC与Au之间的大功函数差使我们能够合成一种具有不对称金属接触结构的高效MoC/MoS/Au光电探测器，该探测器无需外部电力即可实现光检测。我们相信这种新型器件为微型自供电光电探测器的设计提供了新方向。这些结果也突出了通过CVD制备的超薄MoC在异质结器件应用中的巨大潜力。
