Xiong Yunhai, Xu Duo, Zou Yousheng, Xu Lili, Yan Yujie, Wu Jianghua, Qian Chen, Song Xiufeng, Qu Kairui, Zhao Tong, Gao Jie, Yang Jialin, Zhang Kai, Zhang Shengli, Wang Peng, Chen Xiang, Zeng Haibo
MIIT Key Laboratory of Advanced Display Materials and Devices, Jiangsu Engineering Research Center for Quantum Dot Display, Institute of Optoelectronics & Nanomaterials, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, China.
National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.
Nat Mater. 2025 May;24(5):688-697. doi: 10.1038/s41563-025-02141-w. Epub 2025 Mar 7.
Currently, p-type two-dimensional (2D) materials lag behind n-type ones in both quantity and performance, hindering their use in advanced p-channel transistors and complementary logic circuits. Non-layered materials, which make up 95% of crystal structures, hold the potential for superior p-type 2D materials but remain challenging to synthesize. Here we show a vapour-liquid-solid-solid growth of atomically thin (<1 nm), high-quality, non-layered 2D β-BiO crystals on a SiO/Si substrate. These crystals form via a transformation from layered BiOCl intermediates. We further realize 2D β-BiO transistors with room-temperature hole mobility and an on/off current ratio of 136.6 cm V s and 1.2 × 10, respectively. The p-type nature is due to the strong suborbital hybridization of Bi 6s6p with O 2p at the crystal's M-point valence band maximum. Our work can be used as a reference that adds more 2D non-layered materials to the 2D toolkit and shows 2D β-BiO to be promising candidate for future electronics.
目前，p型二维材料在数量和性能方面都落后于n型二维材料，这阻碍了它们在先进的p沟道晶体管和互补逻辑电路中的应用。构成95%晶体结构的非层状材料有望成为优质的p型二维材料，但合成仍具有挑战性。在此，我们展示了在SiO/Si衬底上通过气-液-固-固生长法制备原子级薄（<1 nm）、高质量的非层状二维β-BiO晶体。这些晶体通过层状BiOCl中间体的转变形成。我们进一步实现了二维β-BiO晶体管，其室温空穴迁移率和开/关电流比分别为136.6 cm V s和1.2×10。其p型特性归因于晶体M点价带最大值处Bi 6s6p与O 2p的强亚轨道杂化。我们的工作可为二维材料库增添更多二维非层状材料提供参考，并表明二维β-BiO是未来电子学的有前景的候选材料。
