Yang Hualin, Lai Ting, Ding Haoxuan, Li Bosheng, Gao Ying, Pan Jinbo, Gao Jianzhi, Du Shixuan, Pan Minghu, Guo Quanmin
School of Physics and Astronomy, University of Birmingham, Birmingham B15 2TT, U.K.
Institute of Physics, Chinese Academy of Science, Beijing 100190, China.
ACS Omega. 2025 Mar 10;10(10):10694-10700. doi: 10.1021/acsomega.5c00176. eCollection 2025 Mar 18.
Individual cobalt atoms trapped within a bilayer of C have been produced by the deposition of Co atoms onto a C double layer supported on graphite. High-resolution scanning tunneling microscopy (STM) reveals two stable states of a single cobalt atom coordinated with three C molecules, which is denoted as (C)Co. The diffusion of the cobalt atoms within the C layers is highly limited, resulting in the effective capture of single cobalt atoms in the interstitial sites of the close-packed C layers. Density functional theory calculations show that the Co atom is located in the tetrahedral void between two close-packed C layers. The most stable configuration of (C)Co consists of two C molecules from the top layer with the third C from the bottom layer. A less stable configuration of (C)Co where all three C molecules are from the top layer was also observed at room temperature.
通过将钴原子沉积到支撑在石墨上的碳双层上,制备出了捕获在碳双层中的单个钴原子。高分辨率扫描隧道显微镜(STM)揭示了单个钴原子与三个碳分子配位的两种稳定状态,记为(C)Co。钴原子在碳层内的扩散受到高度限制,导致单个钴原子有效地捕获在密堆积碳层的间隙位置。密度泛函理论计算表明,钴原子位于两个密堆积碳层之间的四面体空隙中。(C)Co最稳定的构型由顶层的两个碳分子和底层的第三个碳分子组成。在室温下也观察到了(C)Co不太稳定的构型,其中所有三个碳分子都来自顶层。