Kang Junzhe, Lee Hanwool, Tunga Ashwin, Xu Xiaotong, Lin Ye, Zhao Zijing, Ryu Hojoon, Tsai Chun-Chia, Taniguchi Takashi, Watanabe Kenji, Rakheja Shaloo, Zhu Wenjuan
Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States.
Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States.
ACS Nano. 2025 Apr 8;19(13):12948-12959. doi: 10.1021/acsnano.4c16862. Epub 2025 Mar 27.
Emerging applications in data-intensive computing and circuit security demand logic circuits with high functional density, reconfigurability, and energy efficiency. Here, we demonstrate nonvolatile reconfigurable four-mode field-effect transistors (NVR4M-FETs) based on two-dimensional (2D) MoTe and CuInPS (CIPS), offering both polarity switching and threshold voltage modulation. The device exploits the ferroelectric polarization of CIPS at the source/drain regions to achieve dynamic control over the transistor polarity, enabling transitions between n-type and p-type states through polarization-induced local electrostatic doping. Additionally, multilayer graphene floating gates are incorporated to modulate the threshold voltage, yielding four distinct nonvolatile operating modes: n-type logic, p-type logic, always-on memory, and always-off memory. Leveraging the four-mode property, the NVR4M-FET can function as a one-transistor-per-bit ternary content-addressable memory (TCAM). In addition, we demonstrate the construction of transformable logic gates with 14 distinct logic functions using two NVR4M-FETs and a reconfigurable half a dder/subtractor using three NVR4M-FETs integrated with load resistors. Furthermore, we show that a 2-input look-up table can be achieved with eight NVR4M-FETs compared to 12 transistors using reconfigurable transistors, highlighting the potential of NVR4M-FETs for high-density logic circuits. These results underscore the potential of NVR4M-FETs as essential building blocks for energy-efficient, in-memory computing, and secure hardware applications.
数据密集型计算和电路安全领域中不断涌现的应用需要具有高功能密度、可重构性和能源效率的逻辑电路。在此,我们展示了基于二维(2D)碲化钼(MoTe)和铜铟磷硫(CuInPS,CIPS)的非易失性可重构四模式场效应晶体管(NVR4M-FET),它兼具极性切换和阈值电压调制功能。该器件利用CIPS在源极/漏极区域的铁电极化来实现对晶体管极性的动态控制,通过极化诱导的局部静电掺杂实现n型和p型状态之间的转换。此外,还引入了多层石墨烯浮栅来调制阈值电压,产生四种不同的非易失性工作模式:n型逻辑、p型逻辑、常开存储器和常关存储器。利用四模式特性,NVR4M-FET可作为每位一个晶体管的三态内容可寻址存储器(TCAM)。此外,我们展示了使用两个NVR4M-FET构建具有14种不同逻辑功能的可变换逻辑门,以及使用三个与负载电阻集成的NVR4M-FET构建可重构半加器/减法器。此外,我们还表明,与使用可重构晶体管的12个晶体管相比,使用八个NVR4M-FET可以实现一个2输入查找表,突出了NVR4M-FET在高密度逻辑电路方面的潜力。这些结果强调了NVR4M-FET作为节能、内存计算和安全硬件应用的基本构建模块的潜力。