Zeng Shuangshuang, Tian Tian, Oh Jiwoo, Lin Zhan-Hong, Shih Chih-Jen
School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, China.
Institute for Chemical and Bioengineering, ETH Zürich, Zürich, Switzerland.
Nat Commun. 2025 Apr 11;16(1):3436. doi: 10.1038/s41467-025-58651-3.
Conventional lithography methods involving pattern transfer through resist templating face challenges of material compatibility with various process solvents. Other approaches of direct material writing often compromise pattern complexity and overlay accuracy. Here we explore a concept based on the Moiré interference of molecular beams to directly pattern complex three-dimensional (3D) surfaces made by any evaporable materials, such as metals, oxides and organic semiconductors. Our proposed approach, termed the molecular-beam holographic lithography (MBHL), relies on precise control over angular projections of material flux passing through nanoapertures superimposed on the substrate, emulating the interference of coherent laser beams in interference lithography. Incorporating with our computational lithography (CL) algorithm, we have demonstrated self-aligned overlay of multiple material patterns to yield binary up to quinary superlattices, with a critical dimension and overlay accuracy on the order of 50 and 2 nm, respectively. The process is expected to substantially expand the boundary of materials combination for high-throughput fabrication of complex superstructures of translational symmetry on arbitrary substrates, enabling emerging nanoimaging, sensing, catalysis, and optoelectronic devices.
传统的光刻方法通过光刻胶模板进行图案转移,面临着与各种工艺溶剂的材料兼容性挑战。其他直接材料写入方法往往会影响图案的复杂性和套准精度。在此,我们探索一种基于分子束莫尔干涉的概念,以直接在由任何可蒸发材料(如金属、氧化物和有机半导体)制成的复杂三维(3D)表面上形成图案。我们提出的方法称为分子束全息光刻(MBHL),它依赖于对穿过叠加在基板上的纳米孔径的材料通量的角度投影进行精确控制,模拟干涉光刻中相干激光束的干涉。结合我们的计算光刻(CL)算法,我们已经展示了多种材料图案的自对准套准,以产生二元至五元超晶格,其关键尺寸和套准精度分别约为50和2纳米。该工艺有望大幅扩展材料组合的边界,用于在任意基板上高通量制造具有平移对称性的复杂超结构,从而实现新兴的纳米成像、传感、催化和光电器件。