Collins Kelsey A, Rowe Emmanuel, Rao Rahul, Siebenaller Ryan, Susner Michael A, Newburger Michael J
Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, Ohio 45433, United States.
Core4ce, Fairborn, Ohio 45433, United States.
J Phys Chem Lett. 2025 Apr 24;16(16):3963-3971. doi: 10.1021/acs.jpclett.5c00309. Epub 2025 Apr 12.
CuInPS (CIPS) is a two-dimensional van der Waals material that is ferrielectric at room temperature ( of 315 K). This can be raised up to 335 K by synthesizing CIPS with Cu deficiencies (CuInPS, CIPS-IPS), which causes the material to self-segregate into separate CIPS and InPS (IPS) domains. Using Brillouin light scattering microscopy, we examine the phonon spectra of CIPS, IPS, and CIPS-IPS (x = 0.2, 0.3, 0.5, 0.6, 0.8) at room temperature and across . We observe unique longitudinal acoustic (LA) phonon signatures for pure CIPS and IPS; however, the CIPS-IPS samples host LA phonons corresponding to both CIPS and IPS, due to the formation of the in-plane heterostructures. These phonons soften in CIPS and CIPS-IPS near their respective values of , and there are sharp discontinuities in the phonon frequencies at , indicative of the ferrielectric-to-paraelectric phase transition. The temperature and width of this transition is dependent on composition, with pure CIPS showing the sharpest transition at 40.0 °C, while reduction in Cu leads to broadening and an increased , caused by the strain exerted on the CIPS domains by the IPS domains. This strain also manifests in IPS domains, as the phonons soften to accommodate the structural change in the CIPS domains.
铜铟磷硫(CIPS)是一种二维范德华材料,在室温(315K)下具有铁电特性。通过合成具有铜缺陷的CIPS(CuInPS,CIPS - IPS),铁电转变温度可提高到335K,这会使材料自分离成单独的CIPS和铟磷硫(IPS)畴。利用布里渊光散射显微镜,我们在室温及不同温度范围内研究了CIPS、IPS和CIPS - IPS(x = 0.2、0.3、0.5、0.6、0.8)的声子谱。我们观察到纯CIPS和IPS具有独特的纵向声学(LA)声子特征;然而,由于面内异质结构的形成,CIPS - IPS样品中的LA声子对应于CIPS和IPS两者。这些声子在CIPS和CIPS - IPS中靠近各自的居里温度时软化,并且在居里温度处声子频率存在急剧不连续性,这表明铁电 - 顺电相变。该转变的温度和宽度取决于成分,纯CIPS在40.0°C时显示出最尖锐的转变,而铜含量的减少会导致转变变宽且居里温度升高,这是由IPS畴对CIPS畴施加的应变引起的。这种应变也在IPS畴中表现出来,因为声子软化以适应CIPS畴中的结构变化。