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以ALD氧化铝为固定相时硅基片对微型气相色谱柱的影响。

Impact of silicon substrate on micro gas chromatographic column using ALD alumina as the stationary phase.

作者信息

Ma Shaojie, Zhu Yuchen, Li Wenbo, Chen Boxin, Zhao Bin, Feng Fei

机构信息

State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China.

Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China.

出版信息

Anal Bioanal Chem. 2025 Apr 12. doi: 10.1007/s00216-025-05872-6.

DOI:10.1007/s00216-025-05872-6
PMID:40220073
Abstract

Due to the high conformal films, atomic layer deposition (ALD) alumina has been used as a uniform stationary phase or support layer of stationary phase for micro gas chromatographic column. However, the severe tailing of chromatographic peaks appears when ALD alumina is used as the stationary phase. Recently, an H-diffusion model was proposed to explain the H accumulation phenomenon of ALD alumina films. Compared with the normal-resistance silicon substrates, the ALD alumina films based on low-resistance silicon substrates have fewer H impurities, which may further improve the tailing of chromatographic peaks and the theoretical number of plates. In this paper, a micro gas chromatographic column based on the low-resistance silicon (LR-μGCC) substrate (resistivity, 0.001-0.005 Ω·cm) using alumina deposited by atomic layer deposition as the stationary phase is reported. Compared with normal-resistance silicon substrates (resistivity, 1-10 Ω·cm), the micro gas chromatographic columns (μGCC) prepared on low-resistance silicon substrates have a higher separation performance. The test results showed that the LR-μGCC increased the theoretical plate number of alkane mixtures (n-hexane, n-octane, n-nonane, and n-decane) by 20.9%, 74.8%, 139.4%, and 55.4%, respectively, and reduced the tailing factor by 13.0%, 41.8%, 48.6%, and 49.1%, respectively.

摘要

由于具有高保形膜,原子层沉积(ALD)氧化铝已被用作微气相色谱柱的均匀固定相或固定相支撑层。然而,当将ALD氧化铝用作固定相时,色谱峰会出现严重的拖尾现象。最近,有人提出了一个H扩散模型来解释ALD氧化铝膜的H积累现象。与普通电阻硅衬底相比,基于低电阻硅衬底的ALD氧化铝膜具有更少的H杂质,这可能会进一步改善色谱峰的拖尾情况和理论塔板数。本文报道了一种基于低电阻硅(LR-μGCC)衬底(电阻率为0.001 - 0.005 Ω·cm)的微气相色谱柱,该柱使用原子层沉积法沉积的氧化铝作为固定相。与普通电阻硅衬底(电阻率为1 - 10 Ω·cm)相比,在低电阻硅衬底上制备的微气相色谱柱(μGCC)具有更高的分离性能。测试结果表明,LR-μGCC使烷烃混合物(正己烷、正辛烷、正壬烷和正癸烷)的理论塔板数分别提高了20.9%、74.8%、139.4%和55.4%,拖尾因子分别降低了13.0%、41.8%、48.6%和49.1%。

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