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使用基于C-3烷基连接体的咔唑衍生自组装单分子层进行界面工程,以在宽带隙钙钛矿太阳能电池中实现41.77%的室内效率。

Interfacial Engineering Using C-3 Alkyl Linker-Based Carbazole-Derived SAM Layers to Achieve 41.77% Indoor Efficiency in Wide-Bandgap Perovskite Solar Cells.

作者信息

Gnanasekaran Premkumar, Shi Zhong-En, Wang Chih-Lin, Peng Jun-Kai, Jiang Bing-Huang, Chen Chih-Ping, Chang Yuan Jay

机构信息

Department of Chemistry, Tunghai University, Taichung, 40704, Taiwan.

Department of Material Engineering and Plasma and Thin Film Technologies, Ming Chi University of Technology, New Taipei City, 243, Taiwan.

出版信息

Small. 2025 Aug;21(31):e2500983. doi: 10.1002/smll.202500983. Epub 2025 Jun 1.

Abstract

The unique molecular properties of carbazole-derived-phosphonic acid-base self-assembled monolayers (SAMs), have great potential in applying perovskite solar cells (PSCs) and optoelectronic devices. SAMs have been successfully used in PSCs and wide bandgap (WBG)-indoor PSCs with excellent hole-extraction and minimize energy loss at the interface defects. Surprisingly, nearly all SAMs reported with an even number of carbons chain linkers (i.e., 2, 4, and 6) are used to connect the carbazole and phosphonic acid fragment. In this work, three SAMs with a n-propyl chain (3C) linker with substitutes (R = H, methoxy, and phenyl) on the carbazole are investigated, designated as 3C-H, 3C-OMe, and 3C-Ph. These SAMs function as stand-alone hole-selective layers anchored on ITO/nickel oxide (NiO) in a p-i-n device architecture. WBG CsFAPb(IBr) perovskite films are deposited onto ITO/NiO layers functionalized with the SAMs. PSCs based on 3C-Ph exhibited an open-circuit voltage (V) of 1.23 V, a short-circuit current density (J) of 21.53 mA cm, and a maximum power conversion efficiency (PCE) of 21.59% under AM 1.5G illumination. Additionally, under indoor lighting conditions, 3C-Ph-based PSCs achieved a J of 280.37 µA cm, a V of 1.09 V, and a fill factor of 81.43%, resulting in an overall maximum PCE of 41.77%.

摘要

咔唑衍生的膦酸碱基自组装单分子层(SAMs)独特的分子特性,在钙钛矿太阳能电池(PSC)和光电器件应用方面具有巨大潜力。SAMs已成功应用于PSC和宽带隙(WBG)室内PSC,具有出色的空穴提取能力,并能最大限度地减少界面缺陷处的能量损失。令人惊讶的是,几乎所有报道的具有偶数个碳链连接基(即2、4和6)的SAMs都用于连接咔唑和膦酸片段。在这项工作中,研究了三种具有正丙基链(3C)连接基且咔唑上带有取代基(R = H、甲氧基和苯基)的SAMs,分别命名为3C-H、3C-OMe和3C-Ph。这些SAMs在p-i-n器件结构中作为独立的空穴选择性层锚定在ITO/氧化镍(NiO)上。WBG CsFAPb(IBr)钙钛矿薄膜沉积在经SAMs功能化的ITO/NiO层上。基于3C-Ph的PSC在AM 1.5G光照下表现出开路电压(V)为1.23 V、短路电流密度(J)为21.53 mA cm,以及最大功率转换效率(PCE)为21.59%。此外,在室内照明条件下,基于3C-Ph的PSC实现了J为280.37 µA cm、V为1.09 V以及填充因子为81.43%,从而总体最大PCE为41.77%。

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