Suppr超能文献

一种基于玻璃晶圆级IPD技术的采用平面螺旋电感的片上巴伦。

An On-Chip Balun Using Planar Spiral Inductors Based on Glass Wafer-Level IPD Technology.

作者信息

Qian Jiang, Wu Peng, Quan Haiyang, Wang Wei, Wang Yong, Sun Shanshan, Xia Jingchao

机构信息

School of Integrated Circuits, Peking University, Beijing 100871, China.

Beijing Microelectronics Technology Institute, Beijing 100076, China.

出版信息

Micromachines (Basel). 2025 Apr 9;16(4):443. doi: 10.3390/mi16040443.

Abstract

As integrated electronic microsystems advance, their internal components demonstrate increasing miniaturization, higher-density integration, and, consequently, significantly enhanced performance. This paper presents an on-chip transformer balun. The balun has a combination of planar coupled inductors and filtering capacitors using integrated passive device (IPD) technology, giving it the advantages of a more compact circuit size and lower cost to achieve single-ended to differential function on glass substrates. Moreover, it can be integrated in systems by flip-chip. The die has a size of 1.81 mm × 1.36 mm with a -15 dB single-ended return loss bandwidth of 2.07 GHz to 4.30 GHz. Within this bandwidth, the maximum insertion loss is 2.56 dB, and the amplitude imbalance is less than 2.04 dB. The phase difference between the differential signals is 180 ± 14.02° and the common mode rejection ratio (CMRR) is above 19.08 dB. The balun has the potential of miniaturization for integration on package or through-glass interposers (TGIs).

摘要

随着集成电子微系统的发展,其内部组件呈现出日益小型化、更高密度集成的特点,因此性能得到显著提升。本文介绍了一种片上变压器巴伦。该巴伦采用集成无源器件(IPD)技术,结合了平面耦合电感和滤波电容,使其具有电路尺寸更紧凑、成本更低的优势,能够在玻璃基板上实现单端到差分的功能。此外,它可以通过倒装芯片集成到系统中。芯片尺寸为1.81 mm×1.36 mm,单端回波损耗带宽为-15 dB,范围从2.07 GHz到4.30 GHz。在该带宽内,最大插入损耗为2.56 dB,幅度不平衡小于2.04 dB。差分信号之间的相位差为180±14.02°,共模抑制比(CMRR)高于19.08 dB。该巴伦具有在封装或玻璃通孔中介层(TGI)上集成实现小型化的潜力。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/59eb/12029373/cb9e4a3fd227/micromachines-16-00443-g001.jpg

相似文献

1
An On-Chip Balun Using Planar Spiral Inductors Based on Glass Wafer-Level IPD Technology.
Micromachines (Basel). 2025 Apr 9;16(4):443. doi: 10.3390/mi16040443.
2
The Design of a 1-6 GHz Broadband Double-Balanced Mixer.
Micromachines (Basel). 2023 Nov 7;14(11):2069. doi: 10.3390/mi14112069.
6
A 30-60 GHz Broadband Low LO-Drive Down-Conversion Mixer with Active IF Balun in 65 nm CMOS Technology.
Micromachines (Basel). 2024 Jun 29;15(7):845. doi: 10.3390/mi15070845.
8
Design and Implementation of Broadband Hybrid 3-dB Couplers with Silicon-Based IPD Technology.
Micromachines (Basel). 2023 Apr 25;14(5):932. doi: 10.3390/mi14050932.

本文引用的文献

1
Ultrathin Small Outline Package Key Techniques for High-Speed Chips with Multi-Leads.
Micromachines (Basel). 2024 Aug 13;15(8):1029. doi: 10.3390/mi15081029.
2
Reliability Simulation Analysis of TSV Structure in Silicon Interposer under Temperature Cycling.
Micromachines (Basel). 2024 Jul 30;15(8):986. doi: 10.3390/mi15080986.
3
Wafer Level Vacuum Packaging of MEMS-Based Uncooled Infrared Sensors.
Micromachines (Basel). 2024 Jul 23;15(8):935. doi: 10.3390/mi15080935.

文献AI研究员

20分钟写一篇综述,助力文献阅读效率提升50倍。

立即体验

用中文搜PubMed

大模型驱动的PubMed中文搜索引擎

马上搜索

文档翻译

学术文献翻译模型,支持多种主流文档格式。

立即体验