Feng Qiang, He Jiayi, Wang Wenyang, Liu Huili
School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China.
Adv Sci (Weinh). 2025 Jun;12(22):e2416518. doi: 10.1002/advs.202416518. Epub 2025 May 5.
Promising thermoelectric materials are usually those of "phonon-glass electron-crystal" (PGEC) compounds, with low thermal conductivity and high carrier mobility. In metallic materials, strong electron-phonon interaction usually causes an increase of Seebeck coefficient (S) at low temperature, due to an extra electrical current driven by heat-carrying phonons, named phonon drag effect. Here, this study reports that single crystalline metallic MgBi has low lattice thermal conductivity of ≈0.49 W m K at 285 K, and corresponding mean free path of phonons (L) is ≈0.48 nm, with carrier mobility of ≈54.2 cm V s around room temperature. It is found that S exhibits an increase as a "hump" ≈20 K, and phonon drag effect (S) contributes to ≈80%, significantly higher than diffusive electrons. Meanwhile, S is positively proportional to L, where coefficient of S/L is ≈4.6 × 10 µV K µm, twice that of CrSb and FeSb, and relative strength of electron-phonon interaction is ≈0.12. The L-intercept of S/L approaches to ≈4.68 nm, where phonons can be strongly scattered before interacting with electrons, leading to a negligible phonon drag effect. The findings shed light on fundamental understanding of thermoelectric transport and exploring novel thermoelectric materials.
有前景的热电材料通常是那些具有“声子玻璃电子晶体”(PGEC)的化合物,它们具有低导热率和高载流子迁移率。在金属材料中,强电子-声子相互作用通常会导致低温下塞贝克系数(S)增加,这是由于携带热量的声子驱动了额外的电流,即所谓的声子拖拽效应。在此,本研究报告称,单晶金属MgBi在285K时具有约0.49W m⁻¹ K⁻¹的低晶格热导率,相应的声子平均自由程(L)约为0.48nm,在室温附近载流子迁移率约为54.2cm² V⁻¹ s⁻¹。研究发现,S在约20K处呈现出一个“驼峰”状的增加,声子拖拽效应(S)贡献约80%,显著高于扩散电子。同时,S与L成正比,S/L的系数约为4.6×10⁻⁴µV K⁻¹ µm,是CrSb和FeSb的两倍,电子-声子相互作用的相对强度约为0.12。S/L的L截距接近约4.68nm,在该截距处声子在与电子相互作用之前会被强烈散射,导致声子拖拽效应可忽略不计。这些发现有助于深入理解热电输运并探索新型热电材料。