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基于多层薄膜的偏振无关宽带红外选择性吸收器

Polarization-Independent Broadband Infrared Selective Absorber Based on Multilayer Thin Film.

作者信息

Wu Shenglan, Huang Hao, Wang Xin, Tian Chunhui, Huang Zhenyong, Zhong Zhiyong, Liu Shuang

机构信息

School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.

School of Electronic Engineering, Chengdu Technological University, Chengdu 611730, China.

出版信息

Nanomaterials (Basel). 2025 Apr 29;15(9):678. doi: 10.3390/nano15090678.

Abstract

Spectrally selective infrared absorbers play a pivotal role in enabling optoelectronic applications such as infrared detection, thermal imaging, and photothermal conversion. In this paper, a dual-band wide-spectrum infrared selective absorber based on a metal-dielectric multilayer structure is designed. Through optimized design, the absorptance of the absorber reaches the peak values of 0.87 and 1.0 in the target bands (3-5 μm and 8-14 μm), while maintaining a low absorptance of about 0.2 in the non-working bands of 5-8 μm, with excellent spectral selectivity. By analyzing the Poynting vector and loss distribution, the synergistic mechanism of the ultra-thin metal localized enhancement effect, impedance matching, and intrinsic absorption of the material is revealed. This structure exhibits good polarization-insensitive characteristics and angle robustness within a large incident angle range, showing strong adaptability to complex optical field environments. Moreover, the proposed planarized structure design is compatible with standard fabrication processes and has good scalability, which can be applied to other electromagnetic wave bands. This research provides new design ideas and technical solutions for advanced optoelectronic applications such as radiation cooling, infrared stealth, and thermal radiation regulation.

摘要

光谱选择性红外吸收体在实现诸如红外探测、热成像和光热转换等光电应用中起着关键作用。本文设计了一种基于金属-介质多层结构的双波段宽光谱红外选择性吸收体。通过优化设计,该吸收体在目标波段(3-5μm和8-14μm)的吸收率分别达到0.87和1.0的峰值,同时在5-8μm的非工作波段保持约0.2的低吸收率,具有优异的光谱选择性。通过分析坡印廷矢量和损耗分布,揭示了超薄金属局域增强效应、阻抗匹配和材料本征吸收的协同机制。该结构在大入射角范围内表现出良好的偏振不敏感特性和角度鲁棒性,对复杂光场环境具有很强的适应性。此外,所提出的平面化结构设计与标准制造工艺兼容且具有良好的可扩展性,可应用于其他电磁波波段。本研究为辐射冷却、红外隐身和热辐射调控等先进光电应用提供了新的设计思路和技术解决方案。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/382d/12073195/7eec13323217/nanomaterials-15-00678-g001.jpg

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