Danielsen Dorte Rubæk, Lassaline Nolan, Linde Sander Jæger, Nielsen Magnus Vejby, Zambrana-Puyalto Xavier, Sarbajna Avishek, Nguyen Duc Hieu, Booth Timothy J, Leitherer-Stenger Nicolas, Raza Søren
Department of Physics, Technical University of Denmark, Kongens Lyngby 2800, Denmark.
Department of Electrical and Photonics Engineering, Technical University of Denmark, Kongens Lyngby 2800, Denmark.
ACS Nano. 2025 Jun 10;19(22):20645-20654. doi: 10.1021/acsnano.5c02025. Epub 2025 May 27.
Dielectric structures can support low-absorption optical modes, which are attractive for engineering light-matter interactions with excitonic resonances in two-dimensional (2D) materials. However, the coupling strength is often limited by the electromagnetic field being confined inside the dielectric, reducing the spatial overlap with the active excitonic material. Here, we demonstrate a scheme for enhanced light-matter coupling by embedding excitonic tungsten disulfide (WS) within dielectric hexagonal boron nitride (hBN), forming a van der Waals (vdW) heterostructure that optimizes the field overlap and alignment between excitons and optical waveguide modes. To tailor diffractive coupling between free-space light and the waveguide modes in the vdW heterostructure, we fabricate Fourier surfaces in the top hBN layer by using thermal scanning-probe lithography and etching, producing sinusoidal topographic landscapes with nanometer precision. We observe the formation of exciton-polaritons with a Rabi splitting indicating that the system is at the onset of strong coupling. These results demonstrate the potential of Fourier-tailored vdW heterostructures for exploring advanced optoelectronic and quantum devices.
介电结构可以支持低吸收光学模式,这对于设计与二维(2D)材料中的激子共振的光与物质相互作用很有吸引力。然而,耦合强度通常受到限制,因为电磁场被限制在电介质内部,从而减少了与活性激子材料的空间重叠。在这里,我们展示了一种增强光与物质耦合的方案,即将激子二硫化钨(WS)嵌入介电六方氮化硼(hBN)中,形成范德华(vdW)异质结构,该结构优化了激子与光波导模式之间的场重叠和对准。为了调整自由空间光与vdW异质结构中的波导模式之间的衍射耦合,我们通过热扫描探针光刻和蚀刻在顶部hBN层中制造傅里叶表面,产生具有纳米精度的正弦地形景观。我们观察到具有拉比分裂的激子极化激元的形成,表明该系统处于强耦合的起始阶段。这些结果证明了傅里叶定制的vdW异质结构在探索先进光电器件和量子器件方面的潜力。