Zheng Xiaoxiao, Han Lei, Fatima Sabeen, Khan Safia, Sun Yu, Li Ziheng, Ning Yafei, Leifer Klaus, Zhu Gengchang, Li Hu, Song Aimin
Shandong Technology Centre of Nanodevices and Integration, School of Integrated Circuits, Shandong University, 250101, Jinan, China.
Shenzhen Research Institute of Shandong University, 518063, Shenzhen, China.
Nano Lett. 2025 Jun 25;25(25):9967-9975. doi: 10.1021/acs.nanolett.5c01548. Epub 2025 Jun 11.
Transition metal dichalcogenides (TMDCs) hold significant promise in constructing next-generation high-performance electronic devices, potentially extending Moore's law and enabling the realization of three-dimensional integrated circuit architectures. However, realizing this potential depends critically on developing a reliable method to transfer TMDCs from a growth substrate to desirable surfaces. Here, we report a dry-transfer strategy of liquid nitrogen-assisted cryogenic exfoliation to achieve large-scale and superclean transfer of TMDCs. Benefited from the synergistic effect of liquid nitrogen-induced exfoliation and protection of hafnium oxide, the transferred TMDCs are free from polymer residues and show excellent electrical property, and taking n-type single-crystal molybdenum disulfide as a demonstration, the transferred TMDC exhibits high carrier mobility up to 38.4 cm V s. Moreover, this transfer method shows versatile capabilities in transferring monolayer and multilayer TMDCs and constructing bi- and trilayer heterostructures. Therefore, our proposed transfer methodology promises the integration of TMDCs into future, ultimately scaled-down, electronic device technologies.
过渡金属二硫属化物（TMDCs）在构建下一代高性能电子器件方面具有巨大潜力，有望扩展摩尔定律并实现三维集成电路架构。然而，要实现这一潜力，关键在于开发一种可靠的方法，将TMDCs从生长衬底转移到理想的表面上。在此，我们报告了一种液氮辅助低温剥离的干转移策略，以实现TMDCs的大规模超净转移。受益于液氮诱导剥离和氧化铪保护的协同效应，转移后的TMDCs没有聚合物残留，并且显示出优异的电学性能，以n型单晶二硫化钼为例，转移后的TMDC表现出高达38.4 cm² V⁻¹ s⁻¹的高载流子迁移率。此外，这种转移方法在转移单层和多层TMDCs以及构建双层和三层异质结构方面具有多种功能。因此，我们提出的转移方法有望将TMDCs集成到未来最终缩小规模的电子器件技术中。
