Hou Yueying, Li Linze, Sun Sutao, Liu Gan, Zhao Hongyuan, Chen Zhiheng, Yan Xuejun, Lv Yang-Yang, Yang Yurong, Yao Shu-Hua, Zhou Jian, Chen Y B, Lu Ming-Hui, Gusev Vitalyi, Chen Yan-Feng
National Laboratory of Solid State Microstructures, Nanjing University, Nanjing, 210093, China.
Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Nanjing University, Nanjing, 210093, China.
Adv Sci (Weinh). 2025 Aug;12(31):e04798. doi: 10.1002/advs.202504798. Epub 2025 Jun 20.
The transition metal pentatelluride ZrTe exhibits rich lattice-sensitive topological electronic states, and demonstrates great potential in photoelectric and thermoelectric devices. However, a comprehensive investigation of electron-phonon coupling and phonon scattering process remains limited, despite their importance for transport properties and device optimization. Here, the hot carrier dynamics and a 1.15 THz A mode coherent phonon in ZrTe are investigated by femtosecond transient spectroscopy across 10-300 K. Notably, polarization-dependent measurements explicitly decouple a strong anisotropic transient response, which is attributed to the effects of excited-state electron relaxation and reflectivity modulation by displacive excited coherent phonons. The temperature dependence of electron relaxation time in ZrTe shows an inflection point, first offering the ultrafast dynamical signature of a temperature-driven Lifshitz transition. At low temperatures, a long-lived electron relaxation component emerges in the transient response, providing possible evidence of topological surface states in ZrTe. In addition, the temperature-dependent coherent phonon is also analyzed, revealing that its scattering is dominated by three-phonon interactions and exhibits a relatively long lifetime compared to other modes. This work deepens the understanding of ultrafast processes in ZrTe, resolves longstanding questions, paves the way for studying electronic phase transitions, and advances ZrTe's application in optoelectronic and quantum devices.
过渡金属五碲化物ZrTe展现出丰富的晶格敏感拓扑电子态,并在光电和热电装置中显示出巨大潜力。然而,尽管电子 - 声子耦合和声子散射过程对输运性质和器件优化很重要,但对它们的全面研究仍然有限。在此,通过飞秒瞬态光谱在10 - 300 K范围内研究了ZrTe中的热载流子动力学和1.15 THz的A模式相干声子。值得注意的是,偏振相关测量明确解耦了强烈的各向异性瞬态响应,这归因于激发态电子弛豫和位移激发相干声子引起的反射率调制的影响。ZrTe中电子弛豫时间的温度依赖性显示出一个拐点,首次提供了温度驱动的里夫希茨转变的超快动力学特征。在低温下,瞬态响应中出现了一个长寿命的电子弛豫分量,为ZrTe中的拓扑表面态提供了可能的证据。此外,还分析了温度相关的相干声子,发现其散射主要由三声子相互作用主导,并且与其他模式相比具有相对较长的寿命。这项工作加深了对ZrTe中超快过程的理解,解决了长期存在的问题,为研究电子相变铺平了道路,并推动了ZrTe在光电器件和量子器件中的应用。