Kang Mingu, Cho Kyoungah, Kim Sangsig
Department of Electrical Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea.
Nanomaterials (Basel). 2025 Jun 7;15(12):880. doi: 10.3390/nano15120880.
In this study, we investigate the impact of rising time on alternating current (AC) stress-induced degradation in amorphous indium-tin-gallium-zinc oxide (a-ITGZO) TFTs through both experiments and simulations. When AC bias stresses with rising and falling times () of 400 ns, 200 ns, and 100 ns were applied to the a-ITGZO TFTs, the threshold voltage () shifted positively by 0.97 V, 2.68 V, and 2.83 V, respectively. These experimental results align with a stretched exponential model, which attributes the to electron trapping in bulk dielectric states or at interface traps. The simulation results further validate the stretched exponential model by illustrating the potential distribution across the dielectric and channel layers as a function of and the density of states in the a-ITGZO TFT.
在本研究中，我们通过实验和模拟研究了上升时间对非晶铟锡镓锌氧化物（a-ITGZO）薄膜晶体管中交流（AC）应力诱导退化的影响。当对a-ITGZO薄膜晶体管施加上升和下降时间（）分别为400 ns、200 ns和100 ns的交流偏置应力时，阈值电压（）分别正向偏移0.97 V、2.68 V和2.83 V。这些实验结果与拉伸指数模型相符，该模型将其归因于体介电态或界面陷阱中的电子俘获。模拟结果通过说明a-ITGZO薄膜晶体管中作为上升时间函数的介电层和沟道层上的电势分布以及态密度，进一步验证了拉伸指数模型。
