Robalo Pereira Clara, Bond Liam J, Mazzanti Matteo, Gerritsma Rene, Safavi-Naini Arghavan
Institute for Theoretical Physics, Institute of Physics, University of Amsterdam, Science Park 904, 1098 XH Amsterdam, The Netherlands.
Van der Waals-Zeeman Institute, Institute of Physics, University of Amsterdam, 1098 XH Amsterdam, The Netherlands.
Entropy (Basel). 2025 May 31;27(6):595. doi: 10.3390/e27060595.
We propose a two-qubit phase gate based on trapped ions that uses fast electric field pulses and spin-dependent local traps generated by optical tweezers. The phases are engineered by spin-dependent coherent evolution, interspersed with momentum kicks. We derive a set of commensurability conditions and expressions for the spin-dependent accumulated phase that, when satisfied, realize the target two-qubit phase gate within tens of microseconds. We study the scalability of our proposal in larger-ion crystals and demonstrate the existence of solutions with up to four ions. Gates in larger crystals should also be possible but will require more commensurability conditions to be fulfilled.
我们提出了一种基于捕获离子的双量子比特相位门，该相位门利用快速电场脉冲和由光镊产生的自旋相关局部势阱。相位通过自旋相关的相干演化来设计，并穿插有动量踢。我们推导了一组可公度性条件以及自旋相关累积相位的表达式，当这些条件满足时，可在几十微秒内实现目标双量子比特相位门。我们研究了该方案在更大离子晶体中的可扩展性，并证明了存在多达四个离子的解决方案。更大晶体中的门应该也是可行的，但需要满足更多的可公度性条件。
