Li Yuan, Huang Yong, Li Jing, Sun Huiqing, Guo Zhiyou
Institute of Semiconductor Science and Technology, South China Normal University, 55 Zhongshan Avenue, Tianhe District, Guangzhou 510631, China.
Guangdong Industrial Training Center, Guangdong Polytechnic Normal University, Guangzhou 510665, China.
Micromachines (Basel). 2025 Jun 7;16(6):687. doi: 10.3390/mi16060687.
A dual AlO MIS gate structure is proposed to enhance the DC and RF performance of enhancement-mode GaN high-electron mobility transistors (HEMTs). As a result, the proposed MOS-HEMT with a dual recessed MIS gate structure offers 84% improvements in cutoff frequency (f) and 92% improvements in maximum oscillation frequency (f) compared to conventional HEMTs (from 7.1 GHz to 13.1 GHz and 17.5 GHz to 33.6 GHz, respectively). As for direct-current characteristics, a remarkable reduction in off-state gate leakage current and a 26% enhancement in the maximum saturation drain current (from 519 mA·mm to 658 A·mm) are manifested in HEMTs with new structures. The maximum transconductance (g) is also raised from 209 mS·mm to 246 mS·mm. Correspondingly, almost unchanged gate-source capacitance curves and gate-drain capacitance curves are also discussed to explain the electrical characteristic mechanism. These results indicate the superiority of using a dual AlO MIS gate structure in GaN-based HEMTs to promote the RF and DC performance, providing a reference for further development in a miniwatt antenna amplifier and sub-6G frequencies of operation.
提出了一种双AlO MIS栅结构，以提高增强型氮化镓高电子迁移率晶体管（HEMT）的直流和射频性能。结果表明，与传统HEMT相比，所提出的具有双凹槽MIS栅结构的MOS-HEMT的截止频率（f）提高了84%，最大振荡频率（f）提高了92%（分别从7.1 GHz提高到13.1 GHz和从17.5 GHz提高到33.6 GHz）。对于直流特性，具有新结构的HEMT表现出关态栅漏电流显著降低，最大饱和漏极电流提高了26%（从519 mA·mm提高到658 A·mm）。最大跨导（g）也从209 mS·mm提高到246 mS·mm。相应地，还讨论了几乎不变的栅源电容曲线和栅漏电容曲线，以解释其电学特性机制。这些结果表明在基于氮化镓的HEMT中使用双AlO MIS栅结构在提升射频和直流性能方面的优越性，为微瓦天线放大器和低于6G工作频率的进一步发展提供了参考。
