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二维过渡金属碳氮化物中的熵调制原子波纹纹理化

Entropy-modulated atomic ripple texturing in two-dimensional transition metal carbonitrides.

作者信息

Liu Minmin, Yang Liting, Wu Zhengchen, Chen Guanyu, Wang Xiangyu, Yang Xiaofen, Liang Guisheng, Che Renchao

机构信息

Laboratory of Advanced Materials, Shanghai Key Lab of Molecular Catalysis and Innovative Materials, Advanced Coatings Research Center of Ministry of Education of China, Sate Key Laboratory of Coatings for Advanced Equipment, Fudan University, Shanghai, 200438, China.

出版信息

Nat Commun. 2025 Jul 1;16(1):5633. doi: 10.1038/s41467-025-60890-3.

Abstract

Periodically atomic displacement in two-dimensional (2D) ripple texturing offers a promising route for selective modulation of local potential, crucial for advanced electronic engineering. However, in 2D transition metal carbonitrides (MXenes), the construction and regulation of atomic ripples to control electronic properties meet substantial challenges due to the difficulty in tailoring homogeneous deformation. Here, we propose a competition strategy that leverages configurational entropy and surface termination to controllably modulate the atomic ripple structure within NbCTe-based Mxenes. This chemical disorder releases the local in-plane strain induced by termination atoms with large ionic radii, thus enabling the regulation of out-of-plane atomic displacement. The deliberate design of the ripple structure regulates the dielectric relaxation time of the microscopic dipole in the electric field. Consequently, high-entropy MXenes deliver strong intensity of microwave absorption (-41.12 dB) and an absorption bandwidth of nearly 10 GHz, covering the S-, C-, and X-bands. This study establishes the relationship between atomic ripple structure, atomic strain, polarization relaxation, and dielectric properties, providing guidance for designing advanced MXenes materials for various applications.

摘要

二维(2D)波纹纹理中的周期性原子位移为局部电势的选择性调制提供了一条很有前景的途径,这对先进电子工程至关重要。然而,在二维过渡金属碳氮化物(MXenes)中,由于难以定制均匀变形,构建和调控原子波纹以控制电子性质面临重大挑战。在此,我们提出一种竞争策略,利用构型熵和表面端基来可控地调制基于NbCTe的MXenes中的原子波纹结构。这种化学无序释放了由具有大离子半径的端基原子引起的局部面内应变,从而实现了对面外原子位移的调控。对波纹结构的精心设计调节了电场中微观偶极子的介电弛豫时间。因此,高熵MXenes具有很强的微波吸收强度(-41.12 dB)和近10 GHz的吸收带宽,覆盖S、C和X波段。本研究建立了原子波纹结构、原子应变、极化弛豫和介电性质之间的关系,为设计用于各种应用的先进MXenes材料提供了指导。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b33c/12219658/7ed6c0605375/41467_2025_60890_Fig1_HTML.jpg

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