Pellegrini Paloma E S, De-Moraes Luana, Poma Freddy Jara, Nista Silvia Vaz Guerra, Cioldin Frederico H, Hernández-Figueroa Hugo Enrique, Moshkalev Stanislav
Center for Semiconductor Components and Nanotechnology, Universidade Estadual de Campinas, Campinas, 13083-870, Brazil.
School of Electrical and Computer Engineering, Universidade Estadual de Campinas, Campinas, 13083-852, Brazil.
Sci Rep. 2025 Jul 2;15(1):23469. doi: 10.1038/s41598-025-07428-1.
Many fields in science and industry rely on the advances of nanofabrication processes. However, well-established techniques, such as electron beam lithography, might pose restrictions on dielectric materials due to surface charging effects. We propose using pulsed thermal scanning probe lithography to directly assemble high resolution patterns on insulating substrates. We applied this methodology to meet the requirements of fabricating all-dielectric metasurfaces. The pulsed thermal scanning probe lithography process, operating in standard room conditions, provided sub-10nm resolution for patterning on silica without the need of any additional conductive layers. Thus, the proposed technique improves material compatibility for nanofabrication and consequently enables the exploration of dielectric material properties across a wide range of devices.
科学和工业中的许多领域都依赖于纳米制造工艺的进步。然而，诸如电子束光刻等成熟技术可能会因表面充电效应而对介电材料造成限制。我们建议使用脉冲热扫描探针光刻技术在绝缘基板上直接组装高分辨率图案。我们应用这种方法来满足制造全介电超表面的要求。脉冲热扫描探针光刻工艺在标准室温条件下运行，在二氧化硅上进行图案化时提供了低于10纳米的分辨率，而无需任何额外的导电层。因此，所提出的技术提高了纳米制造的材料兼容性，从而能够在广泛的器件中探索介电材料的特性。
