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通过非线性霍尔效应探究TaIrTe中拓扑性质与电子关联的相互作用。

Probing interplay of topological properties and electron correlation in TaIrTe via nonlinear Hall effect.

作者信息

Jiang Haotian, Xi Tairan, Li Jiangxu, He Yangchen, Ma Hongrui, Mao Yulu, Taniguchi Takashi, Watanabe Kenji, Rhodes Daniel A, Zhang Yang, Xiao Jun, Wang Ying

机构信息

Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, WI, USA.

Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI, USA.

出版信息

Nat Commun. 2025 Jul 10;16(1):6351. doi: 10.1038/s41467-025-61347-3.

Abstract

Studying the interplay of electron correlation and topology is crucial for discovering new quantum states, such as the fractional quantum spin Hall effect and topological superconductors. Unlike linear transport, nonlinear electrical responses, which encode both symmetry and topological features remain largely unexplored in systems with electron correlation and topology. Here we report that nonlinear Hall measurements reveal the emergence of a correlated state in few-layer topological semimetal TaIrTe₄ below a critical temperature and bias current. This state, exhibiting ultra large nonlinear conductivity, is attributed to the formation of a charge density wave in TaIrTe that leads to substantial Berry curvature redistribution. This origin is further supported by the observation of a Raman amplitude mode associated with the charge density wave, enhanced second harmonic generation, and first-principles calculations. Our findings demonstrate that nonlinear electrical probes can access rich phase diagrams in topological materials and highlight the potential of correlated topological systems for developing nonlinear electronics.

摘要

研究电子关联与拓扑结构的相互作用对于发现新的量子态至关重要,比如分数量子自旋霍尔效应和拓扑超导体。与线性输运不同,在具有电子关联和拓扑结构的系统中,编码对称性和拓扑特征的非线性电响应在很大程度上仍未得到探索。在此,我们报告非线性霍尔测量揭示了在临界温度和偏置电流以下,少层拓扑半金属TaIrTe₄中出现了一种关联态。这种呈现出超大非线性电导率的状态,归因于TaIrTe中电荷密度波的形成,该电荷密度波导致了显著的贝里曲率重新分布。与电荷密度波相关的拉曼振幅模的观测、增强的二次谐波产生以及第一性原理计算进一步支持了这一来源。我们的研究结果表明,非线性电探针能够揭示拓扑材料丰富的相图,并突出了关联拓扑系统在开发非线性电子学方面的潜力。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2f7b/12246148/0be7e2f3670f/41467_2025_61347_Fig1_HTML.jpg

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