Du Z Z, Wang C M, Li Shuai, Lu Hai-Zhou, Xie X C
Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China.
Shenzhen Key Laboratory of Quantum Science and Engineering, Shenzhen, 518055, China.
Nat Commun. 2019 Jul 11;10(1):3047. doi: 10.1038/s41467-019-10941-3.
The nonlinear Hall effect has opened the door towards deeper understanding of topological states of matter. Disorder plays indispensable roles in various linear Hall effects, such as the localization in the quantized Hall effects and the extrinsic mechanisms of the anomalous, spin, and valley Hall effects. Unlike in the linear Hall effects, disorder enters the nonlinear Hall effect even in the leading order. Here, we derive the formulas of the nonlinear Hall conductivity in the presence of disorder scattering. We apply the formulas to calculate the nonlinear Hall response of the tilted 2D Dirac model, which is the symmetry-allowed minimal model for the nonlinear Hall effect and can serve as a building block in realistic band structures. More importantly, we construct the general scaling law of the nonlinear Hall effect, which may help in experiments to distinguish disorder-induced contributions to the nonlinear Hall effect in the future.
非线性霍尔效应为更深入理解物质的拓扑态打开了大门。无序在各种线性霍尔效应中起着不可或缺的作用,比如在量子化霍尔效应中的局域化以及反常、自旋和谷霍尔效应的外在机制。与线性霍尔效应不同,即使在主导阶次,无序也会进入非线性霍尔效应。在此,我们推导了存在无序散射时非线性霍尔电导率的公式。我们应用这些公式来计算倾斜二维狄拉克模型的非线性霍尔响应,该模型是对称性允许的非线性霍尔效应最小模型,可作为实际能带结构的构建单元。更重要的是,我们构建了非线性霍尔效应的一般标度律,这可能有助于未来实验区分无序对非线性霍尔效应的贡献。