Zhao Rongzhe, Zhou Yuchen, Guo Peng, Mo Rong, Tang Yonghua, Li Hongxing
Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, School of Physics and Optoelectronics, Xiangtan University, Xiangtan, Hunan, 411105, P. R. China.
Adv Sci (Weinh). 2025 Jul 16:e09037. doi: 10.1002/advs.202509037.
Bismuth vanadate (BiVO₄) is an auspicious photoanode material for photoelectrochemical (PEC) water splitting, but its performance is fundamentally limited by severe charge recombination and sluggish kinetics of the oxygen evolution reaction (OER). Herein, a dual electronic modulation strategy is developed by incorporating molybdenum (Mo) dopants simultaneously into the FeCoNiO cocatalyst surface and the bulk phase of BiVO₄. The resulting Mo:FeCoNiO/Mo:BiVO₄ photoanode delivers a near-theoretical photocurrent density of 7.15 mA cm⁻ at 1.23 V versus reversible hydrogen electrode (RHE) under AM 1.5 G illumination. This exceptional performance arises from the Mo-triggered cross-scale electronic reconstruction: (1) In the bulk, Mo substitution at vanadium (V) sites in BiVO₄ enhances charge transport via n-type doping; (2) At the surface, Mo incorporation into FeCoNiO triggers electron redistribution, creating localized electron reservoirs at Fe/Co/Ni sites. Combined density functional theory (DFT) calculations and experimental validation reveal that the reconfigured Fe sites serve a dual function as efficient hole traps and highly active OER centers, reducing the reaction energy barrier (ΔG) by 1.26 eV. Moreover, the optimized interfacial charge transport boosts carrier separation efficiency from 84.9% to 96.5% and accelerates hole migration by 2.7-fold compared to pristine BiVO₄. This work provides insights into multi-scale electronic engineering for solar energy conversion.
钒酸铋(BiVO₄)是一种用于光电化学(PEC)水分解的理想光阳极材料,但其性能从根本上受到严重的电荷复合和析氧反应(OER)缓慢动力学的限制。在此,通过将钼(Mo)掺杂剂同时引入FeCoNiO助催化剂表面和BiVO₄的体相中,开发了一种双电子调制策略。在AM 1.5 G光照下,所得的Mo:FeCoNiO/Mo:BiVO₄光阳极在相对于可逆氢电极(RHE)为1.23 V时,提供了接近理论值的7.15 mA cm⁻²的光电流密度。这种优异的性能源于Mo引发的跨尺度电子重构:(1)在体相中,BiVO₄中钒(V)位点的Mo取代通过n型掺杂增强了电荷传输;(2)在表面,Mo掺入FeCoNiO触发电子重新分布,在Fe/Co/Ni位点形成局部电子库。结合密度泛函理论(DFT)计算和实验验证表明,重新配置的Fe位点具有高效空穴陷阱和高活性OER中心的双重功能,将反应能垒(ΔG)降低了1.26 eV。此外,与原始BiVO₄相比,优化的界面电荷传输将载流子分离效率从84.9%提高到96.5%,并将空穴迁移速度加快了2.7倍。这项工作为太阳能转换的多尺度电子工程提供了见解。