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噻吩-异靛蓝共低聚物的结构-性能关系:第一性原理研究

Structure-Property Relationship of Thiophene-Isoindigo Co-Oligomers: A First-Principles Study.

作者信息

Bekri Nika, Mammo Wendimagegn, Tegegne Newayemedhin A

机构信息

Sustainable Energy Center of Excellence, Addis Ababa Science and Technology University, 16417 Addis Ababa, Ethiopia.

Nano Technology Center of Excellence, Addis Ababa Science and Technology University, 16417 Addis Ababa, Ethiopia.

出版信息

ACS Omega. 2025 Jul 3;10(27):29331-29340. doi: 10.1021/acsomega.5c02238. eCollection 2025 Jul 15.

Abstract

In this study, density functional theory (DFT) and time-dependent DFT (TD-DFT) are employed to systematically investigate the impact of the molecular structure of thiophene-isoindigo-based co-oligomers (PTI, where denotes the number of thiophene units) on their conformational, electrochemical, optical, and charge transfer properties. A twist in the backbone conformation of the co-oligomers was observed to increase as the number of thiophene units grew. The highest occupied molecular orbital (HOMO) level was found to shift upward, while the lowest unoccupied molecular orbital (LUMO) remained insensitive to the increasing number of thiophene rings. This was attributed to the enhanced electron-donating strength of the thiophene rings, as confirmed by the increase in electrostatic potential (ESP) of the donor units. In contrast to the electrochemical bandgap, the optical bandgap of the co-oligomers remained constant despite the increase in electron-donating properties, suggesting that the intramolecular charge transfer in the co-oligomers is primarily determined by the strong electron-withdrawing isoindigo moiety. Additionally, the exciton binding energies, hole mobilities, and charge transfer properties in the co-oligomers were found to be dictated by the number of thiophene units in the donors. This detailed exploration of structure-property relationships offers valuable insights for the rational design of high-performance organic semiconductor materials.

摘要

在本研究中,采用密度泛函理论(DFT)和含时密度泛函理论(TD-DFT)系统地研究了基于噻吩-异靛蓝的共低聚物(PTI,其中 表示噻吩单元的数量)的分子结构对其构象、电化学、光学和电荷转移性质的影响。观察到随着噻吩单元数量的增加,共低聚物主链构象的扭曲程度增大。发现最高占据分子轨道(HOMO)能级向上移动,而最低未占据分子轨道(LUMO)对噻吩环数量的增加不敏感。这归因于噻吩环供电子强度的增强,供体单元静电势(ESP)的增加证实了这一点。与电化学带隙不同,尽管供电子性质增加,但共低聚物的光学带隙保持不变,这表明共低聚物中的分子内电荷转移主要由强吸电子的异靛蓝部分决定。此外,发现共低聚物中的激子结合能、空穴迁移率和电荷转移性质由供体中噻吩单元的数量决定。这种对结构-性质关系的详细探索为高性能有机半导体材料的合理设计提供了有价值的见解。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4ff0/12268730/00b4bc5b0c6c/ao5c02238_0001.jpg

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