Xu Hua, Li Kai, Tan Zuoquan, Jia Jiaqi, Wang Le, Chen Shanshan
Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-nano Devices, School of Physics, Renmin University of China, Beijing 100872, China.
Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing 100872, China.
Nanomaterials (Basel). 2025 Jul 8;15(14):1059. doi: 10.3390/nano15141059.
Direct chemical vapor deposition (CVD) growth of hexagonal boron nitride (h-BN) on insulating substrates offers a promising pathway to circumvent transfer-induced defects and enhance device integration. This comprehensive review systematically evaluates recent advances in CVD techniques for h-BN synthesis on insulating substrates, including metal-organic CVD (MOCVD), low-pressure CVD (LPCVD), atmospheric-pressure CVD (APCVD), and plasma-enhanced CVD (PECVD). Key challenges, including precursor selection, high-temperature processing, achieving single-crystalline films, and maintaining phase purity, are critically analyzed. Special emphasis is placed on comparative performance metrics across different growth methodologies. Furthermore, crucial research directions for future development in this field are outlined. This review aims to serve as a reference for advancing h-BN synthesis toward practical applications in next-generation electronic and optoelectronic devices.
在绝缘衬底上通过直接化学气相沉积（CVD）生长六方氮化硼（h-BN）为规避转移诱导缺陷和增强器件集成提供了一条有前景的途径。这篇综述全面系统地评估了在绝缘衬底上合成h-BN的CVD技术的最新进展，包括金属有机CVD（MOCVD）、低压CVD（LPCVD）、常压CVD（APCVD）和等离子体增强CVD（PECVD）。对关键挑战进行了批判性分析，包括前驱体选择、高温处理、获得单晶薄膜以及保持相纯度。特别强调了不同生长方法的比较性能指标。此外，还概述了该领域未来发展的关键研究方向。本综述旨在为推动h-BN合成在下一代电子和光电器件中的实际应用提供参考。
