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通过一步激光划刻实现与封装石墨烯的层间接触。

Through-Layer Contact with Encapsulated Graphene Using One-Step Laser Scribing.

作者信息

Park Sang-Chan, Park Won Gyun, Kim Chulsoo, Ahn Jae-Hyuk

机构信息

Department of Electronics Engineering, Chungnam National University, Daejeon 34134, Republic of Korea.

出版信息

ACS Appl Mater Interfaces. 2025 Aug 20;17(33):47474-47486. doi: 10.1021/acsami.5c09559. Epub 2025 Aug 5.

Abstract

Encapsulated graphene plays a key role in enabling stable and functional operation of next-generation electronic and sensing devices. However, establishing electrical contact with encapsulated graphene remains a significant challenge because of the need for separate etching and metal deposition steps, which require complex multistep fabrication processes. This paper introduces a scalable one-step method for forming electrical contacts with encapsulated graphene using CO laser scribing. This approach simultaneously etches the encapsulation layer and forms laser-induced graphene (LIG), enabling direct contact with the underlying graphene in a single step under ambient conditions. The formation of a through-layer LIG contact was experimentally verified via real-time electrical monitoring during laser scribing. This technique reliably creates electrical contacts using various organic and inorganic encapsulation layers, demonstrating broad material compatibility. Using this method, we demonstrated multilayered electrical contacts, top- and bottom-gate graphene field-effect transistors (FETs) with through-layer LIG source/drain electrodes, and sodium-selective sensors in both electrochemical and FET configurations. The proposed method simplifies fabrication and enables the low-cost, scalable integration of encapsulated graphene into next-generation electronic and sensing applications.

摘要

封装石墨烯在实现下一代电子和传感设备的稳定及功能运行方面起着关键作用。然而,由于需要单独的蚀刻和金属沉积步骤,而这些步骤需要复杂的多步制造工艺,因此与封装石墨烯建立电接触仍然是一项重大挑战。本文介绍了一种使用CO激光划刻与封装石墨烯形成电接触的可扩展一步法。这种方法同时蚀刻封装层并形成激光诱导石墨烯(LIG),能够在环境条件下通过单个步骤与下层石墨烯直接接触。通过激光划刻过程中的实时电监测,对贯穿层LIG接触的形成进行了实验验证。该技术使用各种有机和无机封装层可靠地创建电接触,展示了广泛的材料兼容性。使用这种方法,我们展示了多层电接触、具有贯穿层LIG源极/漏极电极的顶栅和底栅石墨烯场效应晶体管(FET),以及电化学和FET配置中的钠选择性传感器。所提出的方法简化了制造过程,并能够将封装石墨烯低成本、可扩展地集成到下一代电子和传感应用中。

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