C Rajkumar, Arulraj Arunachalam
SANKEN (The Institute of Scientific and Industrial Research), The University of Osaka, Osaka, Japan.
Department of Electronics and Communication, University of Allahabad, Prayagraj, Uttar Pradesh, India.
Sci Rep. 2025 Aug 7;15(1):28851. doi: 10.1038/s41598-025-02177-7.
Zinc oxide (ZnO) is a versatile material widely used in optoelectronic devices due to its broad bandgap (3.37 eV), high electron mobility, and significant exciton binding energy (60 meV). In this study, ZnO thin films were fabricated on SiO₂/Si substrates via thermal evaporation, followed by annealing at 400 °C and 600 °C to investigate the effect of thermal treatment on their structural, optical, and photoconductive properties. X-ray diffraction (XRD) analysis confirmed the formation of the hexagonal wurtzite ZnO structure, with improved crystallinity observed at higher annealing temperatures. The photoconductivity of the films demonstrated enhanced response times and self-powered behavior, particularly in the sample annealed at 600 °C. These findings highlight the potential of ZnO thin films for fast-response photodetection applications and show that controlled annealing significantly influences photosensitivity.
氧化锌（ZnO）是一种用途广泛的材料，因其宽带隙（3.37电子伏特）、高电子迁移率和显著的激子结合能（60毫电子伏特）而被广泛应用于光电器件中。在本研究中，通过热蒸发在SiO₂/Si衬底上制备了ZnO薄膜，随后在400℃和600℃下进行退火，以研究热处理对其结构、光学和光电导性能的影响。X射线衍射（XRD）分析证实形成了六方纤锌矿ZnO结构，在较高退火温度下观察到结晶度有所提高。薄膜的光电导表现出更快的响应时间和自供电行为，特别是在600℃退火的样品中。这些发现突出了ZnO薄膜在快速响应光电探测应用中的潜力，并表明可控退火对光敏性有显著影响。
