Niu Meng, Chen Nian-Ke, Wang Bai-Qian, Qin Shun-Yao, Huang Yu-Ting, Sun Hong-Bo, Zhang Shengbai, Li Xian-Bin
State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China.
State Key Lab of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Beijing 100084, China.
Nano Lett. 2025 Aug 20;25(33):12463-12469. doi: 10.1021/acs.nanolett.5c02237. Epub 2025 Aug 6.
Precise control of stacking orders in van der Waals (vdW) heterostructures not only generates novel quantum phenomena but also promises applications in memory and computing devices. However, achieving robust control of the stacking order in vdW heterostructures remains a significant challenge. In this work, TDDFT-MD simulations reveal a photoinduced ultrafast and nonvolatile in-plane structural transition in ferroelectric antimonene. This transition can modify the stacking order in vdW heterostructures based on antimonene. It resembles a sliding effect but retains the geometric center of the antimonene layer and is therefore termed pseudosliding. Furthermore, optical-property switching via pseudosliding is also demonstrated in an Sb/SnSe vdW heterostructure. The present work proposes a new strategy for ultrafast and robust control of stacking orders in vdW heterostructures, leveraging ferroelectric monolayers with an in-plane Peierls distortion.
精确控制范德华(vdW)异质结构中的堆叠顺序不仅会产生新的量子现象,还有望应用于存储器和计算设备。然而,实现对vdW异质结构中堆叠顺序的稳健控制仍然是一项重大挑战。在这项工作中,含时密度泛函理论分子动力学(TDDFT-MD)模拟揭示了铁电锑烯中光诱导的超快且非挥发性的面内结构转变。这种转变可以改变基于锑烯的vdW异质结构中的堆叠顺序。它类似于一种滑动效应,但保留了锑烯层的几何中心,因此被称为伪滑动。此外,在Sb/SnSe vdW异质结构中也证明了通过伪滑动实现光学性质的切换。本工作提出了一种利用具有面内佩尔斯畸变的铁电单层来超快且稳健地控制vdW异质结构中堆叠顺序的新策略。