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h-BP/硼磷烯范德华异质结构的堆叠顺序依赖性电子和光学性质

Stacking Order-Dependent Electronic and Optical Properties of h-BP/Borophosphene Van Der Waals Heterostructures.

作者信息

Ren Kejing, Zhang Quan, Zhang Shengli, Zhang Yang

机构信息

Ministry of Education Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, School of Physics, Xi'an Jiaotong University, Xi'an 710049, China.

出版信息

Nanomaterials (Basel). 2025 Jul 25;15(15):1155. doi: 10.3390/nano15151155.

Abstract

Van der Waals (vdW) heterostructures, typically composed of two-dimensional (2D) atomic layers, have attracted significant attention over the past few decades. Their performance is closely dependent on their composition and interlayer interactions. In this study, we constructed four types of 2D hexagonal BP monolayer (h-BP)/borophosphene vdW heterostructures with different stacking orders: (i) B-B stacking, (ii) P-P stacking, (iii) moire-I, and (iv) moire-II. Their structural stability and their electronic and optical properties were explored by using first-principles calculations. The results show that h-BP/borophosphene heterostructures can maintain their configurations with good structural stability and minimal lattice mismatch. All vdW heterostructures exhibit semiconducting characteristics, and their band gaps are highly dependent on interlayer stacking orders. Due to the regular atomic arrangement and enhanced interlayer dipole interactions, the B-B stacking bilayer opens a relatively large band gap of 0.157 eV, while the moire-II bilayer exhibits a very small band gap of 0.045 eV because of its irregular atom arrangements. By calculating the complex dielectric function, optical absorption spectra of B-B and P-P stacking bilayers were discussed. This study suggests that h-BP/borophosphene heterostructures have desirable optical properties, broadening the potential applications of the constituent monolayers.

摘要

范德华(vdW)异质结构通常由二维(2D)原子层组成,在过去几十年中引起了广泛关注。它们的性能密切依赖于其组成和层间相互作用。在本研究中,我们构建了四种具有不同堆叠顺序的二维六方BP单层(h-BP)/硼磷烯vdW异质结构:(i)B-B堆叠,(ii)P-P堆叠,(iii)莫尔-I,和(iv)莫尔-II。通过第一性原理计算探索了它们的结构稳定性以及电子和光学性质。结果表明,h-BP/硼磷烯异质结构能够保持其构型,具有良好的结构稳定性和最小的晶格失配。所有vdW异质结构都表现出半导体特性,并且它们的带隙高度依赖于层间堆叠顺序。由于规则的原子排列和增强的层间偶极相互作用,B-B堆叠双层打开了相对较大的0.157 eV带隙,而莫尔-II双层由于其不规则的原子排列表现出非常小的0.045 eV带隙。通过计算复介电函数,讨论了B-B和P-P堆叠双层的光吸收光谱。本研究表明,h-BP/硼磷烯异质结构具有理想的光学性质,拓宽了组成单层的潜在应用。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/555a/12348263/195c9bf51b17/nanomaterials-15-01155-g001.jpg

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