非共振强激光和电场对低维CdTe/CdSe II型量子锥的影响

Impact of Nonresonant Intense Laser and Electric Fields on a Low-Dimensional CdTe/CdSe Type-II Cone.

作者信息

Donado Fredy Amador, Almanza Fernando Guerrero, Viña Camilo Frías, Vinasco Juan Alejandro, Sierra-Ortega J, Escorcia-Salas Gene Elizabeth, Hahn R V H, Mora-Ramos M E, Mommadi O, Moussaouy A El, Boussetta R, Duque D, Morales A L, Uran-Parra S, Duque C A

机构信息

Grupo de Investigación en Teoría de la Materia Condensada, Universidad del Magdalena, Santa Marta 470004, Colombia.

Grupo de Óptica e Informática, Departamento de Física, Universidad Popular del Cesar, Sede Hurtado, Valledupar 200001, Colombia.

出版信息

Nanomaterials (Basel). 2025 Aug 7;15(15):1208. doi: 10.3390/nano15151208.

DOI:10.3390/nano15151208

PMID:40801744

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC12348906/

Abstract

In this work, a theoretical study on the combined effects of an external electric field and a nonresonant intense laser field on the electronic properties of a quantum dot with a truncated cone shape is presented. This quantum dot was made from a type-II CdTe/CdSe heterostructure (core/shell). Using the effective mass approximation with parabolic bands and the finite element method, the Schrödinger equation was solved to analyze the confined states of electron, hole, and exciton. This study demonstrates the potential of combining nonresonant intense laser and electric fields to control confinement properties in semiconductor nanodevices, with potential applications in optoelectronics and quantum mechanics-related technologies.

摘要

在这项工作中，我们对外部电场和非共振强激光场对截顶圆锥形状量子点电子性质的联合效应进行了理论研究。该量子点由II型CdTe/CdSe异质结构（核/壳）制成。采用抛物带有效质量近似和有限元方法，求解薛定谔方程以分析电子、空穴和激子的受限态。本研究证明了将非共振强激光场和电场相结合以控制半导体纳米器件中受限性质的潜力，在光电子学和量子力学相关技术中具有潜在应用。