Lu Shihao, Zhang Xufang, Wang Shichao, Li Mingkun, Jiao Shuopei, Liang Yuesong, Wang Wei, Zhang Jing
School of Integrated Circuits, North China University of Technology, Beijing 100144, China.
Key Laboratory of Physical Electronics and Devices, Ministry of Education, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China.
Materials (Basel). 2025 Aug 4;18(15):3657. doi: 10.3390/ma18153657.
Diamond, renowned for its exceptional electrical, physical, and chemical properties, including ultra-wide bandgap, superior hardness, high thermal conductivity, and unparalleled stability, serves as an ideal candidate for next-generation high-power and high-temperature electronic devices. Among diamond-based devices, Schottky barrier diodes (SBDs) have garnered significant attention due to their simple architecture and superior rectifying characteristics. This review systematically summarizes recent advances in diamond SBDs, focusing on both metal-semiconductor (MS) and metal-interlayer-semiconductor (MIS) configurations. For MS structures, we critically analyze the roles of single-layer metals (including noble metals, transition metals, and other metals) and multilayer metals in modulating Schottky barrier height (SBH) and enhancing thermal stability. However, the presence of interface-related issues such as high densities of surface states and Fermi level pinning often leads to poor control of the SBH, limiting device performance and reliability. To address these challenges and achieve high-quality metal/diamond interfaces, researchers have proposed various interface engineering strategies. In particular, the introduction of interfacial layers in MIS structures has emerged as a promising approach. For MIS architectures, functional interlayers-including high-k materials (AlO, HfO, SnO) and low-work-function materials (LaB, CeB)-are evaluated for their efficacy in interface passivation, barrier modulation, and electric field control. Terminal engineering strategies, such as field-plate designs and surface termination treatments, are also highlighted for their role in improving breakdown voltage. Furthermore, we emphasize the limitations in current parameter extraction from current-voltage (I-V) properties and call for a unified new method to accurately determine SBH. This comprehensive analysis provides critical insights into interface engineering strategies and evaluation protocols for high-performance diamond SBDs, paving the way for their reliable deployment in extreme conditions.
金刚石以其卓越的电学、物理和化学性质而闻名，包括超宽带隙、极高的硬度、高导热性和无与伦比的稳定性，是下一代高功率和高温电子器件的理想候选材料。在基于金刚石的器件中，肖特基势垒二极管（SBD）因其简单的结构和优异的整流特性而备受关注。本文综述系统地总结了金刚石SBD的最新进展，重点关注金属-半导体（MS）和金属-中间层-半导体（MIS）结构。对于MS结构，我们批判性地分析了单层金属（包括贵金属、过渡金属和其他金属）和多层金属在调节肖特基势垒高度（SBH）和增强热稳定性方面的作用。然而，诸如高密度表面态和费米能级钉扎等与界面相关的问题的存在，常常导致对SBH的控制不佳，限制了器件的性能和可靠性。为了应对这些挑战并实现高质量的金属/金刚石界面，研究人员提出了各种界面工程策略。特别是，在MIS结构中引入界面层已成为一种有前途的方法。对于MIS架构，评估了包括高k材料（AlO、HfO、SnO）和低功函数材料（LaB、CeB）在内的功能中间层在界面钝化、势垒调制和电场控制方面的功效。还强调了诸如场板设计和表面终端处理等终端工程策略在提高击穿电压方面的作用。此外，我们强调了当前从电流-电压（I-V）特性提取参数时的局限性，并呼吁采用一种统一的新方法来准确确定SBH。这种全面的分析为高性能金刚石SBD的界面工程策略和评估协议提供了关键见解，为其在极端条件下的可靠应用铺平了道路。
