Ozga Monika, Mroczynski Robert, Matus Krzysztof, Arabasz Sebastian, Witkowski Bartłomiej S
Institute of Physics of the Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw, Poland.
Warsaw University of Technology, Institute of Microelectronics and Optoelectronics, Koszykowa 75, 00-662 Warsaw, Poland.
Materials (Basel). 2025 Aug 14;18(16):3820. doi: 10.3390/ma18163820.
Understanding the resistive switching (RS) mechanisms in memristive devices is crucial for developing non-volatile memory technologies. Here, we investigate the memristor effect in hydrothermally grown Au-nanoseeded CuO films. Based on I-V measurements, conductive-AFM, S/TEM, and EDS analyses, we examine the changes within the switching layer associated with RS. Our results reveal a filamentary mechanism of RS. Notably, EDS mapping shows directional Au redistribution between the bottom nanoseeds and the top electrode, while Cu and O remain uniformly distributed. These findings support an electrochemical metallization (ECM)-like filamentary mechanism driven by Au species migration. The use of Au-nanoseeds, required by the solution-based growth method, critically affects filament formation and RS behavior. Our results emphasize the importance of microstructure and electrode-oxide interfaces in determining the switching mechanism in oxide-based memristors.
了解忆阻器件中的电阻开关（RS）机制对于开发非易失性存储技术至关重要。在此，我们研究了水热生长的金纳米籽晶CuO薄膜中的忆阻器效应。基于I-V测量、导电原子力显微镜、扫描/透射电子显微镜和能谱分析，我们研究了与电阻开关相关的开关层内的变化。我们的结果揭示了电阻开关的丝状机制。值得注意的是，能谱映射显示了底部纳米籽晶和顶部电极之间金的定向重新分布，而铜和氧保持均匀分布。这些发现支持了由金物种迁移驱动的类似电化学金属化（ECM）的丝状机制。基于溶液的生长方法所需的金纳米籽晶的使用，对细丝形成和电阻开关行为有至关重要的影响。我们的结果强调了微观结构和电极-氧化物界面在确定氧化物基忆阻器开关机制中的重要性。
