Dongale T D, Pawar P S, Tikke R S, Mullani N B, Patil V B, Teli A M, Khot K V, Mohite S V, Bagade A A, Kumbhar V S, Rajpure K Y, Bhosale P N, Kamat R K, Patil P S
Computational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur 416004, India.
Department of Physics, Shivaji University, Kolhapur 416004, India.
J Nanosci Nanotechnol. 2018 Feb 1;18(2):984-991. doi: 10.1166/jnn.2018.14264.
In the present investigation, we have fabricated copper oxide (CuO) thin film memristor by employing a hydrothermal method for neuromorphic application. The X-ray diffraction pattern confirms the films are polycrystalline in nature with the monoclinic crystal structure. The developed devices show analog memory and synaptic property similar to biological neuron. The size dependent synaptic behavior is investigated for as-prepared and annealed CuO memristor. The results suggested that the magnitude of synaptic weights and resistive switching voltages are dependent on the thickness of the active layer. Synaptic weights are improved in the case of the as-prepared device whereas they are inferior for annealed CuO memristor. The rectifying property similar to a biological neuron is observed only for the as-prepared device, which suggested that as-prepared devices have better computational and learning capabilities than annealed CuO memristor. Moreover, the retention loss of the CuO memristor is in good agreement with the forgetting curve of human memory. The results suggested that hydrothermally grown CuO thin film memristor is a potential candidate for the neuromorphic device development.
在本研究中，我们采用水热法制备了用于神经形态应用的氧化铜（CuO）薄膜忆阻器。X射线衍射图谱证实薄膜本质上是多晶的，具有单斜晶体结构。所开发的器件表现出类似于生物神经元的模拟记忆和突触特性。对制备好的和退火后的CuO忆阻器研究了尺寸依赖性突触行为。结果表明，突触权重的大小和电阻开关电压取决于有源层的厚度。对于制备好的器件，突触权重有所改善，而对于退火后的CuO忆阻器则较差。仅在制备好的器件中观察到类似于生物神经元的整流特性，这表明制备好的器件比退火后的CuO忆阻器具有更好的计算和学习能力。此外，CuO忆阻器的保持损耗与人类记忆的遗忘曲线高度吻合。结果表明，水热生长的CuO薄膜忆阻器是神经形态器件开发的潜在候选者。
