Xia Hang, Liu Jing, Yuan Mohan, Hu Xudong, Gao Liang, Zhang Jianbing, Tang Jiang, Lan Xinzheng
School of Optical and Electronic Information, Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, People's Republic of China.
Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, People's Republic of China.
Nano Lett. 2025 Sep 10;25(36):13689-13696. doi: 10.1021/acs.nanolett.5c03752. Epub 2025 Aug 29.
Solution-processed PbSe colloidal quantum dots (CQDs) are promising candidates for building high-performance infrared photodetectors due to their widely tunable band gaps and high carrier mobility. However, the development of PbSe CQD photodetectors has been hampered by their poor electronic properties. In this work, a monomer-assisted ligand exchange (MLE) strategy was developed that leads to PbSe CQDs with improved electronic properties including increased carrier mobility, extended carrier lifetime, and enhanced electronic uniformity. Based on the MLE approach, short-wave infrared photodetectors with a record specific detectivity (*) of 3.1 × 10 Jones at 1640 nm and their first 300000-pixel focal plane arrays were demonstrated. In addition, uncooled and broadband PbSe CQD photodetectors─showing photoresponses of up to 2.5 μm─were achieved. Notably, a room-temperature * of 3.0 × 10 Jones was achieved at a wavelength of ∼2360 nm, exceeding that of uncooled InGaAs photodetectors at similar wavelengths.
溶液法制备的PbSe胶体量子点（CQDs）因其具有广泛可调的带隙和高载流子迁移率，是构建高性能红外光电探测器的理想候选材料。然而，PbSe CQD光电探测器的发展因其较差的电子性能而受到阻碍。在这项工作中，开发了一种单体辅助配体交换（MLE）策略，该策略可制备出具有改善电子性能的PbSe CQD，包括提高载流子迁移率、延长载流子寿命和增强电子均匀性。基于MLE方法，展示了在1640 nm处具有创纪录的比探测率（）为3.1×10琼斯的短波红外光电探测器及其首个300000像素焦平面阵列。此外，还实现了非制冷宽带PbSe CQD光电探测器，其光响应高达2.5μm。值得注意的是，在波长约为2360 nm处实现了室温下3.0×10琼斯的，超过了类似波长下非制冷InGaAs光电探测器的*。
